Fabrication of Laser-reduced Graphene Oxide in Liquid Nitrogen Environment

Guan, Yingchun; Fang, Yueping; Lim, Gwon; Zheng, Hui; Hong, Minghui

doi:10.1038/srep28913

Cited by 56 publications

(34 citation statements)

References 31 publications

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“…The laser-scribing process was performed at room temperature with a controlled relative humidity of 50% and a constant airflow forced by a fume extractor system. These conditions avoid any intentional doping during the lithographic process; however, the intentional doping/functionalization of the devices by setting an appropriate environment during the laser-scribing process [28,29] constitutes a path to be explored for boosting the performance of this type of devices. Micro drops of bare conductive electric paint TM or Ag-based conductive paint were placed as electrodes to define the electrical access and to avoid any damage on the active GO material when contacting the devices with probes.…”

Section: Methodsmentioning

confidence: 99%

Laser-Fabricated Reduced Graphene Oxide Memristors

et al. 2019

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Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.

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Section: Methodsmentioning

confidence: 99%

Laser-Fabricated Reduced Graphene Oxide Memristors

et al. 2019

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“…Therefore, laser reduction of GO thin film is ideal in several applications including supercapacitors [30][31][32], sensors [33][34][35], and field transistors [36], whereby reduction and device patterning can be achieved simultaneously. Lasers with various wavelengths (248 nm [37], 800 nm [38], 10.6 µm [39]) and different pulse durations (continuous wave, nanosecond [40], picosecond [41], femtosecond (fs) [42]) have been used to perform the reduction. Kaner's group demonstrated a scalable fabrication of supercapacitors by laser direct-writing on GO films and more than 100 micro-supercapacitors were produced in less than 30 minutes [43], illustrating an enormous potential for roll-to-roll production.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Tuning the sub-processes in laser reduction of graphene oxide by adjusting the power and scanning speed of laser

Zhang

Wang

Haylock

et al. 2019

Carbon

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Laser reduction of graphene oxide is a promising technology for manufacturing advanced devices such as supercapacitors, sensors and transistors, owing to its distinctive advantages in selective and localized GO reduction, direct micro-nanoscale patterning, and no requirement for chemicals. However, the fundamental mechanism underlying the laser induced reduction is still not well understood. In this paper, we demonstrate that by adjusting the power and scanning speed of a 780 nm femtosecond laser, not only can one distinguish, but also effectively tune, two coexisting sub-processes during the laser reduction, namely the direct conversion from sp 3 to sp 2

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“…al. [19] has developed a new method of the reduction of standing GO sheets via laser processing. Feng et al [20] fabricated rGO via electronic solution reduction.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of scalable and tunable slightly oxidized graphene via chemical vapor deposition

Sagar

Namvari

Navale

et al. 2017

Journal of Colloid and Interface Science

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Semiconducting, large sheets of carbon as an active material in optoelectronic research are missing and reduced graphene oxide (rGO) can be a good candidate. However, chemical synthesis cannot produce large sheets of rGO (i.e. maximum: 20-30μm) as well as high quality rGO due to the restraints of fabrication method. Thus, a novel strategy for the synthesis of large sheets of semiconducting rGO is urgently required. Large area slightly oxidized graphene (SOG) is fabricated at the interface of silicon dioxide (SiO) and silicon via Chemical Vapor Deposition (CVD) method, herein for the first time. Carbon atoms bond with oxygen functionalities (i.e. CO, COH) at the time of diffusion in SiO allowing for C/O ratios from 7 to 10 adjustable by the variation of SiO thickness, indicating the tunable oxidation. Moreover, electronic structure and morphology of SOG are similar to the chemically grown rGO. The fabrication mechanism of SOG is also investigated.

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Fabrication of Laser-reduced Graphene Oxide in Liquid Nitrogen Environment

Cited by 56 publications

References 31 publications

Laser-Fabricated Reduced Graphene Oxide Memristors

Laser-Fabricated Reduced Graphene Oxide Memristors

Tuning the sub-processes in laser reduction of graphene oxide by adjusting the power and scanning speed of laser

Synthesis of scalable and tunable slightly oxidized graphene via chemical vapor deposition

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