1999
DOI: 10.1109/77.784687
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Fabrication of in-plane aligned YBCO films on polycrystalline Ni tapes buffered with surface-oxidized NiO layers

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Cited by 92 publications
(22 citation statements)
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“…Therefore, attempting to deposit an NiO film having a cube texture on an Ni substrate seems paradoxical since the oxidation of an Ni substrate during the deposition of NiO film induces the development of (111) oriented NiO film, which should be avoided in order to obtain an NiO film having a cube texture. However, Matsumoto et aL obtained a cube textured NiO by oxidizing a cube textured Ni substrate in flowing oxygen [8] or an Ar atmosphere [4]. Therefore, it is still unclear whether the oxidation of an Ni substrate always leads to the development of a (111) orientation of a buffer film.…”
Section: Thermodynamical Background For the Deposition Of Nio Film Onmentioning
confidence: 98%
“…Therefore, attempting to deposit an NiO film having a cube texture on an Ni substrate seems paradoxical since the oxidation of an Ni substrate during the deposition of NiO film induces the development of (111) oriented NiO film, which should be avoided in order to obtain an NiO film having a cube texture. However, Matsumoto et aL obtained a cube textured NiO by oxidizing a cube textured Ni substrate in flowing oxygen [8] or an Ar atmosphere [4]. Therefore, it is still unclear whether the oxidation of an Ni substrate always leads to the development of a (111) orientation of a buffer film.…”
Section: Thermodynamical Background For the Deposition Of Nio Film Onmentioning
confidence: 98%
“…The most important result of these studies was the development of the surface-oxidation epitaxy technique (SOE), which allowed growing the NiO layer epitaxially on the Ni-W surface with good (001) orientation. [8][9][10][11] This epitaxial NiO film can be used successfully as a template for epitaxy of the subsequent buffer layers without further oxidation of the Ni-W tape. However, SOE-grown NiO exhibits a rough surface, which is obviously a great disadvantage of this approach because it substantially decreases the critical current density that can be achieved on such substrates.…”
Section: Introductionmentioning
confidence: 98%
“…One approach is to form biaxially oriented buffer layers on nontextured Ni-based superalloys, such as IBAD (ion-beam-assisted deposition) [1], ISD (inclined substrate deposition) [2] and MBS (modified-bias sputtering) [3]. Another approach is to make biaxially oriented buffer layers on biaxially textured Ni tapes, such as RABiTS (rolling-assisted biaxially textured substrates) [4] and SOE (surface-oxidation epitaxy) [5]. In both cases, transport Jc were very high, however, these methods may have limitation for scale-up and higher costs in commercial production, because of their slow deposition rate of biaxially oriented oxide buffer layers and of complexity of structure of these wires.…”
Section: Introductionmentioning
confidence: 99%