Thin films of Bi(Pb) SrCaCuO were prepared on MgO (100) by single-target sputtering. This deposition process yielded c-axis oriented superconducting thin films with a smooth surface. The as-grown films showed a 2223 single phase and zero resistivity at about 83 K. After deposition, the films were rapidly annealed at 830–850 °C within 120 s in air. The superconducting properties of the annealed films were greatly improved by optimizing the temperature and time during rapid annealing. The lead concentration in the as-grown films apparently was almost zero. However, the films annealed while placing a Bi(Pb)SrCaCuO bulk sample directly on the film surface had a clear lead concentration. The relative cationic ratio of the other elements in the annealed films was almost the same as that of the as-grown films. X-ray photoelectron spectroscopy measurement was carried out to study the change of chemical environments of each ion. Films annealed at 840 °C for 30 s in air showed zero resistivity at 105 K and had the critical current density of about 3×106 A/cm2 at 77 K.
As-grown superconducting thin films of 2223 Ei(Pb)SrCaCuO have first been prepared on MgO(100) substrates by nc magnetron sputtering from a single sintered target. The as-grown fiims showed zero resistivity at about 83 K. After the film deposition, the films were rapidly annealed at 840°C for 30 s in air in order to improve the superconducting properties. During annealing, a bulk BiPbSrCaCuO sample was placed on the film surface. In order to examine the effect of Pb doping, we prepared five sorts of bulk sintered samples of Ei,Pb,Sr,Ca,Cu,O, (x = 0, 0.1, 0.35,0.5 and 0.7) with different Pb contents. The superconducting properties of the thin films were affected by the Pb content of the covering bulks. An x-ray photoelectron spectroscopy measurement was carried out to study the change of chemical environment for each ion. The nature of the chemical bond of each element in the films seems to be unchanged by the Pb doping, except for the Pb. The best film showed zero resistivity at 105 K and had a critical current density of about 2 x 10' A cm-* at 77 K.
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