Epitaxial deposition of NiO film on a cube-textured Ni substrate by metal-organic chemical vapor deposition

Abstract

NiO films have been epitaxially grown by metal-organic chemical vapor deposition (MOCVD) on a bi-axially textured Ni substrate using Ni(thd): as a precursor. The NiO film was deposited at 470~ for 10 min at a deposition pressure of 10 Torr and oxygen partial pressure of 0.91Torr. SEM and AFM observations for the deposited NiO film showed a smooth and dense morphology. X-ray rocking curve and tlJ-scan showed that the NiO film has a bi-axial texture with a (100)<031> orientation. The out-of-plane and the in-plane deviations were measured to be 4.2 ~ and 6~7 ~ from the FWHM of (200) and (111) planes, respectively.

In Operando Analysis of Passive Film Growth on Ni-Cr and Ni-Cr-Mo Alloys in Chloride Solutions

“…substrate may favor NiO formation and subsequently hydrated, overlying Ni(OH) 2 . 25,[101][102][103] Later during passivation, enrichment was said to be driven by thermodynamic factors. 103,104 However, early stages of oxidation appear to favor Cr 1-x Ni x O 1.5-x/2 instead of stoichiometric oxides.…”