Fabrication of a Multi-Level Lens Using Independent-Exposure Lithography and FAB Plasma Etching

Woo, Do Kyun; Hane, Kazuhiro; Lee, Cha Bum; Lee, Sun Kyu

doi:10.1109/omems.2007.4373885

Cited by 3 publications

(15 citation statements)

References 4 publications

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“…Because the electron beam dose is defined by the amount of exposure dose per unit area, the amount of electron beam dose is proportional to pattern area, i.e, if the pattern area is larger despite of the same electron beam dose, the pattern can be actually exposed to more amount of electron beam dose. Thus, the proximity effect such as forward and backward scattering could be strongly generated due to the increase of electron beam dose (Woo et al, 2008). Thus, this experiment led us to two conclusions; (1) the thickness of the developed resist is proportional to electron beam dose in the identically given pattern size and (2) the thickness of the developed resist is proportional to the pattern size in the identically given electron dose.…”

Section: Spin Coatingmentioning

confidence: 78%

“…In order to fabricate such a multi-level lens or binary structure using the independentexposure method, we have to keep two crucial considerations in mind: (1) The resist thickness should be greater than that of a multi-level lens we designed because of 1:1 etching ratio in etching process, (2) the relation between the electron beam dose and the thickness of developed resist should be definitely clarified (Woo et al 2008) …”

Section: Principlementioning

confidence: 99%

“…Table 2. Experiment conditions for relation between the exposure dose and the developed resist thickness (Woo et al, 2008). Fig.…”

Section: Spin Coatingmentioning

confidence: 99%

“…7, it was seen that the appropriate range of electron beam dose for fabricating a multi-level lens is from 55μC/cm 2 to 80μC/cm 2 . To successfully fabricate a multi-level lens (Woo et al, 2008).…”

Section: Spin Coatingmentioning

confidence: 99%

“…Schematic of Independent-exposure method (Woo et al, 2008) It was known that the electron beam resist thickness can be controlled by the modulation of exposure dose in electron beam lithography (Hirai et al, 2000). Based on this, the principle of independent-exposure method for the fabrication of a multi-level lens is to make the resist profile identical to that of a multi-level lens by different and appropriate electron beam dose (Woo, et al 2008). Fig.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Independent-Exposure Method in Electron-Beam Lithography

Woo¹,

Lee²

2010

Lithography

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Section: Spin Coatingmentioning

confidence: 78%

Section: Principlementioning

confidence: 99%

“…Table 2. Experiment conditions for relation between the exposure dose and the developed resist thickness (Woo et al, 2008). Fig.…”

Section: Spin Coatingmentioning

confidence: 99%

Section: Spin Coatingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Independent-Exposure Method in Electron-Beam Lithography

Woo¹,

Lee²

2010

Lithography

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The optimization of sawtooth gratings using RCWA and its fabrication on a slanted silicon substrate by fast atom beam etching

Lee

Hane

Lee

2008

J. Micromech. Microeng.

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This paper presents scalar and vector analyses of sawtooth gratings with a period of 2.0 µm in terms of Fourier transformation and rigorous coupled wave analysis (RCWA) and its fabrication on a slanted silicon substrate by a newly proposed fast atom beam (FAB) etching method. First, the optical and geometrical properties of sawtooth gratings were investigated and optimized under the phase-matching requirement, and the 1st diffraction efficiency for TM polarization and the scalar approximation, 73.0% and 100%, were estimated, respectively. Second, sawtooth gratings optimized by two diffraction analysis methods were successfully fabricated by the FAB etching method. Last, by a hot-embossing process suitable for mass production, 100 µm thick poly-methyl methacrylate (PMMA) material was replicated from a sawtooth-patterned silicon substrate, and its 1st diffraction efficiency for TM polarization, 63.0%, was measured from optical testing.

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Hybrid Multiphase Fresnel Lenses on Silicon Wafers for Terahertz Frequencies

Ayyagari

Indrišiūnas

Kašalynas

2023

IEEE Trans. THz Sci. Technol.

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The hybrid multi-phase Fresnel lenses (H-MPFLs) were developed on silicon (Si) wafer at the selected frequency of 585 GHz. For this reason, the design of a standard MPFL was modified thoroughly in various outer zone areas in order to reduce complexity and manufacturing time of the diffractive optical elements (DOEs) by employing the direct laser ablation (DLA) processes. The phase offset was found by a precise control over the phase shift of incoming radiation in steps of /12, revealing its optimal value to be of +/4 independently on the hybridization order of the lens, the focusing gain of which was found to be up to 10 % higher than that achieved with a standard design MPFL. The numerical modeling data were confirmed by experiments demonstrating the effective THz beam focusing with H-MPFL samples to the diffraction limited spot size. Proposed development procedure can be further modified by scaling the hybrid lens design to other frequencies with different zone numbers and/or by employing other materials suitable for THz photonics integration on-chip with the semiconductor devices.

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Fabrication of a Multi-Level Lens Using Independent-Exposure Lithography and FAB Plasma Etching

Cited by 3 publications

References 4 publications

Independent-Exposure Method in Electron-Beam Lithography

Independent-Exposure Method in Electron-Beam Lithography

The optimization of sawtooth gratings using RCWA and its fabrication on a slanted silicon substrate by fast atom beam etching

Hybrid Multiphase Fresnel Lenses on Silicon Wafers for Terahertz Frequencies

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