orientational investigations on the electronic structure of graphene with adsorbed aluminium or silicon, (2015), doi: 10.1016/j.matdes.2015.09.111 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. In this contribution, we deployed DFT periodic slab calculations to investigate effect of orientational dependence of Al-and Si-adsorbed graphene systems. We utilized 2 × 2 and 2 × 3 graphene supercells with 1:8 (Al, Si : C) atomic ratios. We observed that the relative orientation of adsorbent atoms exerts profound influence on electronic structures in conjunction with a matching effect caused by the distinct adsorption sites (i.e. bridge, hollow or top). The orientation effects of Si-adsorbed graphene on electronic structure are greater than their Al analogous structures. We anticipate our finding herein, of low adatom concentration on graphene, to prompt re-examination of metal-graphene systems to account for the previously unnoticed -but significant -orientational effect that adds an additional degree of freedom to elemental adsorption on graphene.