Fabrication and evaluation for extremely thin Si wafer

Zhou, Libo; Hosseini, Bahman Soltani; Tsuruga, Tatsuya; Shimizu, Jun; Eda, Hiroshi; Kamiya, Sumio; Iwase, Hisao; Tashiro, Yoshiaki

doi:10.1504/ijat.2007.013852

Cited by 24 publications

(27 citation statements)

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“…In our previous studies [17,18], the DSD was introduced to characterize the magnitude of grinding damage induced, which was defined as the product of residual stress s and depth of subsurface damage layer D # . Based on Stoney's equation [22], the relationship between the DSD and the wafer geometry was expressed as [17,18] where E is the elastic modulus, v is Poisson's ratio of the Si mono-crystal, t is the ultimate wafer thickness and h is the height of the wafer warp.…”

Section: Discussionmentioning

confidence: 99%

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A study on the diamond grinding of ultra-thin silicon wafers

Zhou

Tian

Huang

et al. 2011

Proceedings of the Institution of Mechanical Engineers, Part B:

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The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. In this work, diamond grinding for thinning silicon wafers was carried out on an ultra-precision grinding machine. The thinning performance and the minimum wafer thickness were investigated under different grinding conditions. It was found that the grain depth of cut that was used to characterize the overall grinding conditions played an important role in the determination of the final grinding performance. The relationship between the subsurface damage of the ground wafer and the minimum wafer thickness achieved was also revealed.

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Section: Discussionmentioning

confidence: 99%

“…Based on Stoney's equation [22], the relationship between the DSD and the wafer geometry was expressed as [17,18] where E is the elastic modulus, v is Poisson's ratio of the Si mono-crystal, t is the ultimate wafer thickness and h is the height of the wafer warp. As shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

A study on the diamond grinding of ultra-thin silicon wafers

Zhou

Tian

Huang

et al. 2011

Proceedings of the Institution of Mechanical Engineers, Part B:

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“…Compressive stress is usually formed in the surface damage layer of a wafer after the thinning process [5][6][7]9,10]. In the FEA process, thermal stress is assumed to simulate both grinding-induced stress (also called machining stress in this paper) and residual stress since these stresses are technically difficult to handle in the FEA loading process.…”

Section: Force Analysismentioning

confidence: 99%

“…Assuming a uniform layer of grinding-induced damage, Zhou et al [5] proposed a mathematical model using the Stoney formula, in which wafer warp was a function of damage depth, residual stress and wafer thickness. Also using the Stoney formula and the assumption of a uniform damage layer, Chen et al estimated residual stress through warp measurement [6].…”

Section: Introductionmentioning

confidence: 99%

Warping of silicon wafers subjected to back-grinding process

Gao

Dong

Kang

et al. 2015

Precision Engineering

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“…Especially in the grinding processes of ultra-thin wafer, as shown in Figs. 1 and 2 2,3) , subsurface damages including plastic flow and residual stress often cause the warpage or degradation of deflective strength of wafer after grinding by a diamond wheel, and also cause the time consuming in the subsequent stress relief processes such as chemical etching or chemical mechanical polishing (CMP). The removal mechanisms of silicon wafer by diamond tools have been analyzed both theoretically and experimentally [4][5][6][7][8][9] , however, not yet been fully understood.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of Adhesion Effect on Material Removal and Tool Wear in Diamond Grinding of Silicon Wafer

et al. 2008

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This study aims to clarify the interaction between a silicon wafer and individual diamond abrasives in grinding to support the estimation of optimal grinding conditions for minimizing the subsurface damages and maximizing the removal rate. In this paper, the effects of adhesion (or lubrication) between a Si wafer and a diamond abrasive on the material removal and tool wear were analyzed by means of the molecular dynamics simulation. A few simulations were performed with changing the dissociation (cohesion) energy of a Morse potential function between a pair of Si and C atoms to evaluate the influence of adhesion on the material removal process. As a result, a trend similar to the actual diamond grinding process of silicon wafer was confirmed, which suggested that the reduction in adhesion (or proper lubrication) is effective for the reduction in subsurface damages, grinding forces, grinding temperature and tool wear, but may lead to reduction in the material removal rate as well.

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Fabrication and evaluation for extremely thin Si wafer

Cited by 24 publications

References 0 publications

A study on the diamond grinding of ultra-thin silicon wafers

A study on the diamond grinding of ultra-thin silicon wafers

Warping of silicon wafers subjected to back-grinding process

Molecular Dynamics Simulation of Adhesion Effect on Material Removal and Tool Wear in Diamond Grinding of Silicon Wafer

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