A study on the diamond grinding of ultra-thin silicon wafers

Zhou, Libo; Tian, Yebing; Huang, Han; Sato, Hisashi; Shimizu, Jun

doi:10.1177/0954405411414768

Cited by 48 publications

(21 citation statements)

References 25 publications

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“…It should be noted that the bifurcation point can be obtained when ∆ = 0 in Eq. (15), and the point is a function of the mismatch strain which is determined by nano-diamond grinding technique (i.e. the size of nano-diamond particles, grinding process).…”

Section: Resultsmentioning

confidence: 99%

Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

Cai

Zhang

et al. 2017

AIP Advances

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In order to obtain excellent physical properties and ultrathin devices, thinning technique plays an important role in semiconductor industry with the rapid development of wearable electronic devices. This study presents a physical nano-diamond grinding technique without any chemistry to obtain ultrathin silicon substrate. The nano-diamond with spherical shape repeats nano-cutting and penetrating surface to physically etch silicon wafer during grinding process. Nano-diamond grinding induces an ultrathin “amorphous layer” on silicon wafer and thus the mismatch strain between the amorphous layer and substrate leads to stability transition from the spherical to non-spherical deformation of the wafer. Theoretical model is proposed to predict and analyze the deformation of amorphous layer/silicon substrate system. Furthermore, the deformation bifurcation behavior of amorphous layer/silicon substrate system is analyzed. As the mismatch strain increases or thickness decreases, the amorphous layer/silicon substrate system may transit to non-spherical deformation, which is consistent to the experimental results. The amorphous layer stresses are also obtained to predict the damage of silicon wafer.

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Section: Resultsmentioning

confidence: 99%

Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

Cai

Zhang

et al. 2017

AIP Advances

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“…In addition, the measured force components are along horizontal and vertical directions. The normal and tangential grinding forces were calculated using the following equations [24][25][26]:…”

Section: Grinding Force Measurementmentioning

confidence: 99%

Comparative study on grinding of thin-walled and honeycomb-structured components with two CBN wheels

Tian

Zhong

Rawat

2015

Int J Adv Manuf Technol

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In the grinding of thin-walled and honeycombstructured components made up of Hastelloy, undesired burrs are often created. The formed burrs negatively affect the quality of the products. Subsequent deburring increases overall manufacturing process time and cost. This work was focused on development of high-speed grinding process and grinding strategies to reduce burr size and improve ground surface quality. An electroplated Cubic Boron Nitride (CBN) wheel with miniature concave and convex asperities on its circumferential working surface was developed. Grinding performance with the designed CBN wheel was compared with a normal CBN wheel without surface asperities. Special fixtures with the function of adjusting honeycomb orientation (change of grinding direction) were purposely designed and fabricated. Design of experiment (DOE) was adopted for optimization of grinding parameters. It was found that less burr (even burrfree) grinding was achieved with the utilization of the specially designed CBN wheel with concave and convex asperities under optimal grinding conditions investigated, i.e., rotational speed of 5,000 RPM, depth of cut of 25 μm, and feed rate of 7, 500 mm/min.

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“…Backgrinding has been recognized as an important wafer thinning process, owing to the high speed removal of Si and the ability to obtain high dimensional accuracy. However, previous studies demonstrated that backgrinding causes a subsurface damage layer (e.g., crystalline defects/dislocations and microcracks), which induces residual stress into wafer, and causes wafer/chip breakage or degradation of circuit component (6)(7)(8)(9)(10). Figure 1 shows an example of the intensely damaged region in Si wafer after backgrinding with 2000 grit diamond abrasive.…”

Section: Introductionmentioning

confidence: 99%

Wet-Chemical Silicon Wafer Thinning Process for High Chip Strength

Yoshikawa

Miyazaki²,

Watanabe

et al. 2012

ECS Trans.

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We proposed the wet-chemical Si wafer-thinning process and evaluated the damage caused by this process. For the damage evaluation, we measured the die fracture stress and fracture energy, and compared various wafer-thinning processes (backgrinding, wet-chemical Si wafer-thinning, backgrinding + chemical mechanical polishing, backgrinding + wet etching). The result of comparative study shows that wet-chemical wafer-thinning processing has very high fracture stress/energy demonstrating that the damage of wet-chemical Si wafer-thinning process is very small.

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A study on the diamond grinding of ultra-thin silicon wafers

Cited by 48 publications

References 25 publications

Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

Comparative study on grinding of thin-walled and honeycomb-structured components with two CBN wheels

Wet-Chemical Silicon Wafer Thinning Process for High Chip Strength

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