Warping of silicon wafers subjected to back-grinding process

Gao, Shang; Dong, Zhigang; Kang, Renke; Zhang, Bi; Guo, Dongming

doi:10.1016/j.precisioneng.2014.10.009

Cited by 56 publications

(14 citation statements)

References 14 publications

(20 reference statements)

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“…For example, the soft back etch is a simple and delicate process compared to the complex and abrasive nature associated with the induced scratches, crystal defects, and the formation of stresses that take place during back grinding [133]. Furthermore, using the soft back etch requires no chemical mechanical polishing and leaves no residual stress on the substrate unlike the machining stress caused during back grinding [134][135][136]. Finally, back grinding to thinner substrates causes subsurface damage [136] and shallow surface cracks [135].…”

Section: The Complementary Transfer-free Inorganic Approachmentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

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Section: The Complementary Transfer-free Inorganic Approachmentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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“…Warped wafers can affect device performance, reliability, and linewidth control in various processing steps. 20,21 Trajectory tracking control is the compelling topic of interest to surface vehicle research scholars. In Wang et al, 22 accurate trajectory tracking can be achieved using finite-time control approach, with nonsingular fast-terminal sliding mode and finite-time disturbance observer techniques deployed.…”

Section: Introductionmentioning

confidence: 99%

“…Warped wafers can affect device performance, reliability, and linewidth control in various processing steps. 20,21…”

Section: Introductionmentioning

confidence: 99%

Transient uniformity model predictive control in dealing with non-uniformity of multivariable systems

Wang

Incecik

et al. 2019

Proceedings of the Institution of Mechanical Engineers, Part M:

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In this article, the model predictive control scheme is studied for a class of multiple-input multiple-output linear systems with different transient trajectories among the outputs. To eliminate the transient errors among the outputs, a modified model predictive control scheme is designed making one output track following the reference while the other outputs track following this output instead of the reference. Utilizing the specified output as the alternative reference for all the other outputs, a constructive model predictive control scheme is developed to diminish the differences of the transient-state trajectories among each output such that both the uniformity of the transient-state trajectories and the optimal steady-state trajectories are achieved. The effectiveness of the proposed transient uniformity model predictive control scheme is demonstrated in the experiment of the semiconductor wafer manufacturing baking process. The experimental results show that the transient uniformity model predictive control scheme has successfully reduced the integral square error of transient-state uniformity between any two outputs by 90% as compared to the conventional model predictive control scheme. The robustness of the proposed scheme has also been experimentally evaluated in the presence of external disturbance and plant modeling inaccuracy.

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“…The flatness measurement plays an important role in production engineering to determine if the flatness of the wafer satisfies given requirements as wafers with large deformation tend to break. Also, the flatness measurement is used for monitoring thermal and mechanical effects on the wafer shape during the wafer processing [7,8]. However, the accurate flatness measurement of wafer is affected greatly by gravity, especially for large and thin wafers.…”

Section: Introductionmentioning

confidence: 99%

Analysis Of Factors Affecting Gravity-Induced Deflection For Large And Thin Wafers In Flatness Measurement Using Three-Point-Support Method

Liu

Dong

Kang

et al. 2015

Metrology and Measurement Systems

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Accurate flatness measurement of silicon wafers is affected greatly by the gravity-induced deflection (GID) of the wafers, especially for large and thin wafers. The three-point-support method is a preferred method for the measurement, in which the GID uniquely determined by the positions of the supports could be calculated and subtracted. The accurate calculation of GID is affected by the initial stress of the wafer and the positioning errors of the supports. In this paper, a finite element model (FEM) including the effect of initial stress was developed to calculate GID. The influence of the initial stress of the wafer on GID calculation was investigated and verified by experiment. A systematic study of the effects of positioning errors of the support ball and the wafer on GID calculation was conducted. The results showed that the effect of the initial stress could not be neglected for ground wafers. The wafer positioning error and the circumferential error of the support were the most influential factors while the effect of the vertical positioning error was negligible in GID calculation.

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Warping of silicon wafers subjected to back-grinding process

Cited by 56 publications

References 14 publications

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Transient uniformity model predictive control in dealing with non-uniformity of multivariable systems

Analysis Of Factors Affecting Gravity-Induced Deflection For Large And Thin Wafers In Flatness Measurement Using Three-Point-Support Method

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