Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance

Vassilevski, Konstantin; Zekentes, K.; Constantinidis, G.; Strel'chuk, Anatoly M.

doi:10.1016/s0038-1101(00)00053-8

Cited by 25 publications

(22 citation statements)

References 12 publications

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“…To assess the validity of the parameters, the trap densities calculated from eq. (2) were applied to simulation of diodes reported in [11][12][13][14] and the results of breakdown voltages are compared to reported ones as shown in Table 1.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Wei

Liang

Samudra

2011

8th International Conference on Power Electronics - ECCE Asia

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This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC/GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.Index Terms--High voltage p-n junction, SiC/GaN diode simulation, WBG power semiconductor.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Wei

Liang

Samudra

2011

8th International Conference on Power Electronics - ECCE Asia

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“…Moreover, the thicker the drift layer is, the longer time it must have been exposed to high temperature in HTCVD for when fabricating the original wafer, which lead to larger defects density. To verify the above formula, the trap densities calculated by above formula were applied to diodes reported in [14][15][16][17][18] in simulation and the results of breakdown voltages are compared to reported ones shown in Table II.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Wei

Liang

Samudra

2007

2007 International Conference on Power Engineering, Energy and Electrical Drives

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This paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation.Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step.

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“…The feasibility of using GaN for IMPATT devices has been seen recently [1,2] in the literature. Some theoretical as well as experimental results on SiC-based IMPATTs are also seen recently in the literature [6,7]. A comparative study between GaN and 4H-SiC [8] shows that SiC are also the potential material to use for IMPATT devices at high frequency.…”

Section: Introductionmentioning

confidence: 82%

Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs

Панда

Rao

2009

2009 Asia Pacific Microwave Conference

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SiC-based IMPATTs with its different polytypes (3C, 4H, and 6H) are modeled, designed and a comparative study among three are presented in this paper to operate at D-band frequency at the same operating conditions and frequency of operations under static and dynamic conditions. A noise analysis model was also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based IMPATTs. The results show that 3C-SiC based IMPATTs have better power delivery capability whereas 4H SiC-based IMPATTs are less noisy. Hence a noise-power trade-off method is used to determine the potential of each polytypes of SiC-based IMPATTs.

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Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance

Cited by 25 publications

References 12 publications

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs

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