Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs

Abstract

SiC-based IMPATTs with its different polytypes (3C, 4H, and 6H) are modeled, designed and a comparative study among three are presented in this paper to operate at D-band frequency at the same operating conditions and frequency of operations under static and dynamic conditions. A noise analysis model was also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based IMPATTs. The results show that 3C-SiC based IMPATTs have better power delivery capability whereas 4H SiC-based IMPATTs are less noisy. Hence a noise-power trade-off method is used to determine the potential of each polytypes of SiC-based IMPATTs.

Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

“…The noise generation rate [8] , γ(x)=αn(x)⋅υsn(x)⋅n(x)+ αp(x)⋅υsp(x)⋅p(x) (where n and p are the concentrations of avalanche generated electrons and holes severally), for the diodes were calculated. A generalized method [8][9] , which is capable of estimating the distribution profile of noise electric field, mean-square noise voltage per band-width (〈v 2 〉/df) and noise measure (NM) in the IMPATT diode with arbitrary doping distribution and material combination, was employed to simulate noise properties in the studied devices.…”

Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes

“…By utilizing the finite difference method and double iteration technique [7] , these equations were solved subject to appropriate boundary and initial conditions to calculate the values of static state DC parameters such as breakdown voltage (VB), peak electric field strength (EP) without any dynamic state AC signal. The large signal simulation was performed via considering the IMPATT diode as a sinusoidal voltage (vt=0.5VBsin(2πft), where f is the signal frequency) driven source biased by a DC voltage VDC with current density JDC=3.2×10 5 A/cm 2 . This value of JDC is between the lower limit and the upper one adopted in reference [3], it can be considered reasonable.…”

“…Using a large signal simulation software based on non-sinusoidal voltage excitation, Suranjana Banerjee et al compared the performance of DDR IMPATT diodes of (n)Si/(p)3C-SiC, (p)Si/(n)3C-SiC heterostructures and of Si homostructure [4] , which shows that (n)Si/(p)3C-SiC device excels the other two with respect to Po and η at both 0.3 THz and 0.5 THz. A. K. Panda et al developed a noise analysis model to compare the noise characteristics of 4H-SiC, 6H-SiC and 3C-SiC homostructural IMPATT diodes operating at D-band frequency [5] , which implies that 3C-SiC device shows higher Po delivery whereas 4H-SiC one exhibits less noise.…”

High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

“…Out of numerous poly types of SiC only 4H-SiC and 6H-SiC substrates are commercially available. 4H-SiC is the most widely explored material [10]- [13] for high power devices because its carrier mobility is higher as compared to 6H-SiC. More isotropic nature of electrical properties makes 4H-SiC still more attractive for power device applications [5].…”