Fabrication and characterization of the ZnO-based Memristor

Kumar, Apurva; Rawal, Yaksh; Baghini, Maryam Shojaei

doi:10.1109/icemelec.2012.6636244

Cited by 18 publications

(8 citation statements)

References 8 publications

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“…In the electro-forming process, a high voltage with suitable compliance current is first given to the device to create the free vacancies in the active layer. This forming process is an undesirable process, especially for neuromorphic and non-volatile memory applications [28,[46][47]. In our device, this electro-forming step is not needed because enough vacancies for initiating the switching operation are created in the thin film via photo annealing.…”

Section: Resistive Switching Mechanismmentioning

confidence: 99%

“…Among the available materials for memristor and memristive devices, zinc oxide (ZnO) and its composite has some unique advantages: nontoxic and easy synthesis, high ion mobility, excellent resistance switching property, and relatively low set and reset voltages. In recent years, ZnO and its composites have been extensively used to fabricate memristive devices [19,22,27,28]. In previous works, the high-temperature thermal annealing process was used for creating vacancies within the ZnO thin film [29][30][31].…”

Section: Introductionmentioning

confidence: 99%

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Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

et al. 2020

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An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

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Section: Resistive Switching Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

et al. 2020

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“…2 recent years due to its applications in solar cells [3]- [8], thin film transistors [3]- [5], [9], [10], resistive switching memory devices [11]- [14] and transparent conductive oxides [15]- [19].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Method to reduce the formation of crystallites in ZnO nanorod thin-films grown via ultra-fast microwave heating

et al. 2018

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“…Memristors are two-terminal memory cells with a sandwiched active layer. This simple two-terminal structure has shown a promising output in many metal oxides such as TiO 2 [ 1 ], NiO [ 2 ], ZnO [ 7 ], perovskites [ 8 ], and transition metal di-chalcogenide monolayers [ 9 , 10 ]. Among all oxides, CuO is the most widely investigated and reported material because of its good availability, easy synthesis, good reliability, non-toxic behavior, and low cost.…”

Section: Introductionmentioning

confidence: 99%

Memristive Devices from CuO Nanoparticles

et al. 2020

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Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO2/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current–voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole–Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

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Fabrication and characterization of the ZnO-based Memristor

Cited by 18 publications

References 8 publications

Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

Method to reduce the formation of crystallites in ZnO nanorod thin-films grown via ultra-fast microwave heating

Memristive Devices from CuO Nanoparticles

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