Method to reduce the formation of crystallites in ZnO nanorod thin-films grown via ultra-fast microwave heating

Gray, Robert; Jaafar, Ayoub H.; Verrelli, E.; Kemp, Neil T.

doi:10.1016/j.tsf.2018.07.034

Cited by 14 publications

(7 citation statements)

References 29 publications

(26 reference statements)

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“…This resistive switching phenomenon is most likely associated with the repeated formation and rupture of local conductive filaments (CFs), although interfacial-/bulk-based switching has been also reported . Resistive switching has been observed in a wide range of materials, such as binary metal oxides, − perovskites, − 2D materials, ,− organics, − and organic–inorganic composite materials. ,,− …”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

et al. 2021

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In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory.

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Section: Introductionmentioning

confidence: 99%

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

et al. 2021

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“…Leon Chua's pioneering work on the theoretical description of memristors, combined with their potential applications in next generation logic circuits and memory devices, has sparked enormous interest in low‐power, nonvolatile, two‐terminal resistive memory devices . The ability of memristors to emulate the analogue switching and learning properties of biological synapses, is also emerging as a significant area of importance that has the potential to usher in a new generation of large scale bioinspired neural networks.…”

Section: Introductionmentioning

confidence: 99%

Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites

Jaafar

O’Neill

Kelly

et al. 2019

Adv Elect Materials

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An optical memristor where the electrical resistance memory depends on the history of both the current flowing through the device and the irradiance of incident light onto it is demonstrated. It is based on a nanocomposite consisting of functionalized gold nanoparticles in an optically active azobenzene polymer matrix. The composite has an extremely low percolation threshold of 0.04% by volume for conductivity because of the aggregation of the conducting nanoparticles into filamentary nanochannels. Optical irradiation results in photomechanical switching through expansion of the thin film from above to below the percolation threshold, giving a large LOW/HIGH resistance ratio of 10 3 . The device acts as an artificial synapse, the conductivity or plasticity of which can be independently modulated, either electrically or optically, to enable tunable and reconfigurable synaptic circuits for brain-inspired artificial intelligent or visual memory arrays. The lifetime of the resistive-memory states is also optically controllable, which enables spatial modulation of long-and short-term memory.

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“…Optoelectronic switching memories have been demonstrated in various materials such oxides, ,,, 2D materials, ,, graphene oxide, perovskites, chalcogenides, organics/polymers, ,, and organic–inorganic nanocomposites. − In particular, nanocomposites provide a number of advantages, including low cost, easy solution-based processing − via screen-printing or spin-coating, and easy tailoring of the materials’ mechanical, electronic, and optical properties through chemical synthesis. − In comparison to inorganic material-based devices, nanocomposite-based resistive memories have demonstrated significant switching properties such as high ON/OFF ratios, ultra-low operating voltages, reduced power consumption, multilevel data storage, analogue switching, and flexibility. − However, the fabrication of organic–inorganic composites is still much less studied than devices having solely inorganic constituents.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites

Jaafar

Lowe

Gee

et al. 2023

ACS Appl. Polym. Mater.

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Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuromorphic computing systems and artificial vision systems. Here, we report on the fabrication of an optoelectronic switching memory device based on semiconducting zinc oxide nanoparticles (ZnO NPs) embedded within a photoactive azobenzene polymer. The device shows electronic resistive switching and a reversible optical switching effect upon changing the polarization of the applied light. Optical illumination with circularly/linearly polarized light expands/contracts the nanocomposite film and modifies the conduction pathway, facilitated by the presence of the ZnO NPs, as a semiconductor material within the insulating poly(disperse red 1 acrylate) material. The carrier transport and the operating switching mechanism are explained on the basis of the current−voltage (I−V) results. The reported device enables optical controllable resistive switching properties that may find applications in visual systems integrated within artificial intelligence networks.

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Method to reduce the formation of crystallites in ZnO nanorod thin-films grown via ultra-fast microwave heating

Abstract: to reduce the formation of crystallites in ZnO nanorod thin-films grown via ultra-fast microwave heating. Tsf (2018),

Cited by 14 publications

References 29 publications

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites

Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites

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