Fabrication and characterization of metal insulator semiconductor Ag/PVA/GO/PVA/n-Si/Ag device

Kaur, Ravneet; Arora, Anmol; Tripathi, Shweta

doi:10.1016/j.mee.2020.111419

Cited by 8 publications

(2 citation statements)

References 42 publications

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“…Hence, it can be partially oxidized by powerful oxidants and, in this way, graphene oxide (GO) is synthesized and different functional groups such as epoxy groups on its surface lead to water solubility. Due to the presence of carboxyl, carbonyl, and epoxide groups on the surface of GO, it is an electrical insulator because of the disruption of its sp 2 bonding networks [23,24]. Therefore, it has limited potential for gas-sensing purposes.…”

Section: Introductionmentioning

confidence: 99%

N-Doped Graphene and Its Derivatives as Resistive Gas Sensors: An Overview

et al. 2023

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Today, resistance gas sensors which are mainly realized from metal oxides are among the most used sensing devices. However, generally, their sensing temperature is high and other materials with a lower operating temperature can be an alternative to them. Graphene and its derivatives with a 2D structure are among the most encouraging materials for gas-sensing purposes, because a 2D lattice with high surface area can maximize the interaction between the surface and gas, and a small variation in the carrier concentration of graphene can cause a notable modulation of electrical conductivity in graphene. However, they show weak sensing performance in pristine form. Hence, doping, and in particular N doping, can be one of the most promising strategies to enhance the gas-sensing features of graphene-based sensors. Herein, we discuss the gas-sensing properties of N-doped graphene and its derivatives. N doping can induce a band gap inside of graphene, generate defects, and enhance the conductivity of graphene, all factors which are beneficial for sensing studies. Additionally, not only is experimental research reviewed in this review paper, but theoretical works about N-doped graphene are also discussed.

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Section: Introductionmentioning

confidence: 99%

N-Doped Graphene and Its Derivatives as Resistive Gas Sensors: An Overview

et al. 2023

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“…Also, polyvinyl alcohol (PVA) has been lately attracting researchers and thought for usage in Organic field-effect transistors (OFETs), MPS-type structures, and capacitors for its capability of thin-film fabrication, specialties in usage processes such as effortlessly dissolving in water or alcohol, and by being nontoxic, a wide range of crystallinity, having high dielectric strength, and reasonable charge storage capacity, and fast eliminating the oxidation of surfaces specialty for better conduction by its formation. (Ashery et al, 2021;Demirezen & Yerişkin, 2021;Kaur et al, 2020;Alsmael et al, 2022). In 2021, researchers investigated a PVA/nSi Schottky barrier device for its electrical characteristics dependent on temperature.…”

Section: Introductionmentioning

confidence: 99%

An Informetric View to the Negative Capacitance Phenomenon at Interlayered Metal-Semiconductor Structures and Distinct Electronic Devices

URGUN,

ALSMAEL,

TAN

2023

Gazi University Journal of Science Part A: Engineering and Innovation

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Negative Capacitance (NC) phenomenon, which can be explained as the material exhibiting an inductive behavior, is often referred to as "anomalous" or "abnormal" in the literature. Especially in the forward bias/deposition region, the presence of surface states (Nss) and their relaxation times (τ), series resistance (Rs), minority carrier injection, interface charge loss in occupied states under the Fermi energy level, parasitic inductance, or poor measuring equipment calibration problems can be counted among the causes of this phenomenon. Studies on NC behavior have shown that this behavior can be observed for different frequencies, temperatures, and related parameters at forward biases. However, the NC behavior, which appears as an unidentified peak in admittance spectroscopy data, is not yet fully understood. Ultimately, this study aims to compile and analyze the NC reported in selected scientific studies, investigate the source of this phenomenon, and observe statistics in a general view.

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Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

Wang,

Peng,

Jin

et al. 2024

Adv Materials Inter

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Investigating the intrinsic properties of the Schottky interface between graphene and 3D bulk silicon is crucial. However, the semiconductor technology introduces extra doping and defects in graphene, which significantly disturbs the property of the graphene‐silicon interface. Here, the interface parameters of graphene/n‐Si heterojunction are derived by the damage‐free Hg‐probe capacitance–voltage measurement. Due to its low‐density states, the Fermi level of graphene can be pushed upward, which results in a lower Schottky barrier height (ΦB0) of Hg/graphene/n‐Si (HGS) heterostructure than that of Hg/n‐Si (HS) structure. Additionally, the series resistance (Rs) of HGS becomes lower than that of HS, which can be attributed to the narrowed depletion layer width (WD) and the decreased interface state density (Nit). Furthermore, the frequency characteristic is also investigated. Because of the weak interface state charge trapping–detrapping process and the decreased Nit at high frequency, electrons will accumulate in graphene, and the Fermi level will be pushed up. Hence, the ΦB0 and Rs will decrease with increasing frequency. This study contributes to a deep understanding of the graphene/silicon heterojunction interfaces, which is crucial for designing and optimizing the new electronic and optoelectronic devices based on 2D/3D heterostructure.

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Fabrication and characterization of metal insulator semiconductor Ag/PVA/GO/PVA/n-Si/Ag device

Cited by 8 publications

References 42 publications

N-Doped Graphene and Its Derivatives as Resistive Gas Sensors: An Overview

N-Doped Graphene and Its Derivatives as Resistive Gas Sensors: An Overview

An Informetric View to the Negative Capacitance Phenomenon at Interlayered Metal-Semiconductor Structures and Distinct Electronic Devices

Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

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