Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement
Ting Wang,
Songang Peng,
Zhi Jin
et al.
Abstract:Investigating the intrinsic properties of the Schottky interface between graphene and 3D bulk silicon is crucial. However, the semiconductor technology introduces extra doping and defects in graphene, which significantly disturbs the property of the graphene‐silicon interface. Here, the interface parameters of graphene/n‐Si heterojunction are derived by the damage‐free Hg‐probe capacitance–voltage measurement. Due to its low‐density states, the Fermi level of graphene can be pushed upward, which results in a l… Show more
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