An Informetric View to the Negative Capacitance Phenomenon at Interlayered Metal-Semiconductor Structures and Distinct Electronic Devices
Nuray URGUN,
Jaafar ALSMAEL,
Serhat Orkun TAN
Abstract:Negative Capacitance (NC) phenomenon, which can be explained as the material exhibiting an inductive behavior, is often referred to as "anomalous" or "abnormal" in the literature. Especially in the forward bias/deposition region, the presence of surface states (Nss) and their relaxation times (τ), series resistance (Rs), minority carrier injection, interface charge loss in occupied states under the Fermi energy level, parasitic inductance, or poor measuring equipment calibration problems can be counted among t… Show more
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