Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Asmar, R. Al; Juillaguet, Sandrine; Ramonda, Michel; Giani, Alain; Combette, Philippe; Khoury, A.; Foucaran, A.

doi:10.1016/j.jcrysgro.2004.12.034

Cited by 56 publications

(38 citation statements)

References 38 publications

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“…The relatively higher carrier concentration indicates due to the concentration from In +3 ions on substitutional site of Zn +2 ions [6,31,32] as well as Zn i and V O [33]. The resources of carrier and the mobility was influenced by a few scattering mechanisms.…”

Section: Resultsmentioning

confidence: 99%

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

et al. 2008

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Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8× 10 −3 Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV-visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are E 2 low , E 2 high , and A 1 modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.

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Section: Resultsmentioning

confidence: 99%

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

et al. 2008

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“…The possible reason for such observed nature may be the ionic radii of Al 3+ (0.53 Å) and Ga 3+ (0.62 Å) which is smaller than that of Zn 2+ (0.72 Å) and that of In 3+ (0.81 Å) which is bigger than that of Zn 2+ . These variations in the 2h value of ZnO (0 0 0 2) peak can be explained as Al 3+ , Ga 3+ , and In 3+ ions substitute for Zn 2+ ions, respectively [11][12][13].…”

Section: Methodsmentioning

confidence: 98%

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

Sim

Shin

Moholkar

et al. 2010

Current Applied Physics

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“…Such excess oxygen trapped at the boundaries might annihilate shallow donor levels which originated from oxygen vacancies and/or excess zinc. 12) A further study is necessary to reveal that.…”

Section: ¹3mentioning

confidence: 99%

Properties of Al doped zinc oxide films prepared by electron beam-PVD

Yamaguchi

Kuroyama

Okuhara

et al. 2013

J. Ceram. Soc. Japan

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Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al 2 O 3 by EB-PVD. Structural, optical and electrical properties of AZO films were investigated, focusing on the effect of the electron beam power applied to the Al 2 O 3 ingot. X-ray diffraction measurement showed that the AZO films were highly c-axis oriented. Transmittance of all the AZO films was over 85% in the visible range. The highest reflectance in the near IR range was obtained at the EB power on Al 2 O 3 of 7.5 kW, 73% at 2500 nm. The lowest resistivity of 2.34 © 10 ¹4 ³cm was obtained for the film deposited with the EB power on Al 2 O 3 of 7.5 kW.

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Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

Cited by 56 publications

References 38 publications

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

Properties of Al doped zinc oxide films prepared by electron beam-PVD

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