Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Abstract

Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8× 10 −3 Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV-visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are E 2 low , E 2 high , and A 1 modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.

Low-macroscopic field emission properties of wide bandgap copper aluminium oxide nanoparticles for low-power panel applications

“…showing an average roughness around 4 nm. This type of surface roughness is common for sputter-deposited transparent conducting oxide thin films of similar thicknesses as reported earlier [30]. Figure 4(b) is the AFM cross-sectional view of the nanoparticle sample deposited for 10 min.…”

“…Figure4(a) shows the top-view AFM micrograph of the surface structure of the CAO film deposited for 60 min (thickness ∼ 250 nm, confirmed from cross-sectional scanning electron microscopy and considered as bulk film), showing an average roughness around 4 nm. This type of surface roughness is common for sputter-deposited transparent conducting oxide thin films of similar thicknesses as reported earlier[30]. Figure4(b) is the AFM cross-sectional view of the nanoparticle sample deposited for 10 min.…”

Preparation and Characterization of ZnO: In Transparent Conductor by Low Cost Dip Coating Technique

“…ZnO has direct band gap semiconductor of 3.27 eV and has been recognized for its promising applications in blue/UV optoelectronics, spintronic devices, surface acoustic wave devices and sensor applications [5]. ZnO thin films have been prepared by various deposition techniques, such as RF magnetron sputtering [6][7][8], spray pyrolysis [9][10][11][12][13], sol-gel process [14][15][16][17][18], electrochemical deposi-tion [19], molecular beam epitaxy (MBE) [20], pulsed laser deposition (PLD) [21][22][23][24] and metal organic chemical vapor deposition [25]. However the transport properties of undoped ZnO thin films are not stable, especially at high temperatures due to oxygen.…”