Effect of In incorporation on the structural, electrical, and gas sensing properties of ZnO films

Hierarchical hollow ZnO cubes constructed using self-sacrificial ZIF-8 frameworks and their enhanced benzene gas-sensing properties

“…Zinc oxide, an n-type wide bandgap metal oxide semiconductor (MOS), is considered as a promising chemical sensing material due to its non-toxicity, high sensitivity, high electrochemical and thermal stability. [11][12][13] Many advances have been made in improving chemical sensing properties by controlling the thickness of charge dissipation layers, typical exotic ion-doping, 14 blending metal oxides, 15 noble metal loading, 16 and increasing the exposure of reactive planes, typical like porous or hollow nanostructures, 17,18 interpenetrated films, 19 etc. 9,10 These drawbacks are chiefly attributed to the high recombination rates of electron-hole pairs due to the numerous lowenergy defects in crystal lattices, producing the narrower charge dissipation layers, and low exposure of reactive crystal planes, resulting in slow gas-solid interface reaction kinetics.…”

“…9,10 These drawbacks are chiefly attributed to the high recombination rates of electron-hole pairs due to the numerous lowenergy defects in crystal lattices, producing the narrower charge dissipation layers, and low exposure of reactive crystal planes, resulting in slow gas-solid interface reaction kinetics. [11][12][13] Many advances have been made in improving chemical sensing properties by controlling the thickness of charge dissipation layers, typical exotic ion-doping, 14 blending metal oxides, 15 noble metal loading, 16 and increasing the exposure of reactive planes, typical like porous or hollow nanostructures, 17,18 interpenetrated films, 19 etc. However, it is still challenging to improve the selectivity, shortening response and recovery time, and lower the operating temperature and signal drifting of ZnO-based sensing materials.…”

Composition-dependent crystallization enhancing moisture-barrier performance in In–Zn–O thin films

“…The crystalline phase was indexed to be Zn 17 In 2 O 20 . The amorphization in In-rich IZO film is known to be caused by the fact that In atoms prefer to locate in or near the grain boundary regions [14]. These samples were subsequently used to investigate the effect of crystallization on the moisture-barrier performance.…”

A Nano‐Wrinkled Zn0.92Fe0.08O Thin Film Developed Using a High‐RPM Electro‐Spin Patterning Technique via Sol‐Gel Route For Methane Sensing

“…2‐D nanostructures of ZnO are employed in gas sensing and their sensitivity properties enhance due to the large specific area and high surface to volume ratio present in nanostructures . ZnO based flat thin film methane sensor were developed in large extent emplying various kind of nano‐structuring and other metal oxide like as Tin Oxide (SnO 2 ), Tungsten Oxide (WO 3 ), Cuprous Oxide (Cu 2 O), Titanium Dioxide (TiO 2 ) thin film . Thermally stabled WS 2 flakes and WS 2 /WO 3 composites thin film have also been studied in the gas sensing of 1 ppm H 2 , NH 3 and 100 ppm NO 2 at 150 °C .…”