Properties of Al doped zinc oxide films prepared by electron beam-PVD

Yamaguchi, Norio; Kuroyama, Tomohiro; Okuhara, Yoshiki; Matsubara, Hideaki

doi:10.2109/jcersj2.121.981

Cited by 4 publications

(2 citation statements)

References 12 publications

(6 reference statements)

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“…Paper [99] discusses the results of coating deposition of zirconium-and alumina-based ceramics by a high-power electron beam (Figure 11). The coatings were produced by scanning an electron beam over two evaporated targets: a conductive target of ZnO and a dielectric target of Al2O3.…”

Section: Electron-beam Methodsmentioning

confidence: 99%

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

et al. 2022

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This is a review of current developments in the field of ion-plasma and beam methods of synthesis of protective and functional dielectric coatings. We give rationales for attractiveness and prospects of creating such coatings by electron-beam heating and following evaporation of dielectric targets. Forevacuum plasma electron sources, operating at elevated pressure values from units to hundreds of pascals, make it possible to exert the direct action of an electron beam on low-conductive materials. Electron-beam evaporation of aluminum oxide, boron, and silicon carbide targets is used to exemplify the particular features of electron-beam synthesis of such coatings and their parameters and characteristics.

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Section: Electron-beam Methodsmentioning

confidence: 99%

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

et al. 2022

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“…Okuhara et al1) showed sputtering at 200°C and X-ray diffraction indicated (002) and (004) peaks. Yamaguchi et al 18) also heated the substrate at 400°C and observed clear (002) and (004) peaks. Figure 7 shows a photograph of thin film deposited in the shield.…”

Section: Jcs-japanmentioning

confidence: 98%

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

Horiuchi

Sonoda

2017

J. Ceram. Soc. Japan

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ZnO:Al thin film was deposited on glass substrates at room temperature. We used a ceramic ZnO:Al target. Since the oxygen vacancies were artificially introduced into the target, thin film could be deposited by DC magnetron sputtering. When ceramic targets are used, fabrication of transparent conductive ZnO:Al thin film in the facing-target is impossible, due to direct resputtering by oxygen anions. The substrate was colored yellow, and the conductivity was also lost. In this state, the thin film was considered to be "ZnO 1¹x :Al". In order to avoid the damage, we used a shield consisting of an upper plate, side plates, back plate and base plate. The substrate encapsulated in the assembled shield was placed on the anode in the magnetron sputter we used, the target was installed in the upper side of the chamber and the anode was installed in the under side. We also described the method of deciding the size of the shield. "Thermalized" sputter particles entered the channel consisting of upper plate, side plates and base plate, and are deposited on the substrate. The oxygen anions were blocked by the shield plates. The values of the resultant thin films were enumerated. Carrier concentration was 1.25 © 10 21 cm ¹3, a rather high value. Resistivity was 1.13 © 10 ¹3 ³ cm and Hall mobility was 4.43 cm 2 /Vs. Also in the area of high temperature superconductive oxides, thin films were damaged by resputtering by oxygen anions. A shield was also tried in this area. In such cases, simple metal plates were installed beneath the substrates in an off-axis position. Side shields were not installed beside the substrates. This confirmed the necessity of side shield plates. We removed the side shield plates and conducted sputtering. The carrier concentration was 6.92 © 10 19 cm ¹3, resistivity was 1.15 © 10 ¹2 ³ cm and Hall mobility was 7.86 cm 2 /Vs. Based on these values, the effectiveness of the side plates was confirmed.

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Investigation of the effects of thickness on physical properties of AZO sol-gel films for photonic device applications

Necib

Touam

Chelouche

et al. 2018

Journal of Alloys and Compounds

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Properties of Al doped zinc oxide films prepared by electron beam-PVD

Cited by 4 publications

References 12 publications

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

A new fabrication method for ZnO:Al thin films using modified DC magnetron sputtering

Investigation of the effects of thickness on physical properties of AZO sol-gel films for photonic device applications

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