This paper presents the results of time-of-flight mass spectrometry studies of the elemental and mass-to-charge state compositions of metal ion beams produced by a vacuum arc ion source with compound cathode (WC-Co(0.5), Cu-Cr(0.25), Ti-Cu(0.1)). We found that the ion beam composition agrees well with the stoichiometric composition of the cathode material from which the beam is derived, and the maximum ion charge state of the different plasma components is determined by the ionization capability of electrons within the cathode spot plasma, which is common to all components. The beam mass-to-charge state spectrum from a compound cathode features a greater fraction of multiply charged ions for those materials with lower electron temperature in the vacuum arc cathode spot, and a smaller fraction for those with higher electron temperature within the spot. We propose a potential diagram method for determination of attainable ion charge states for all components of the compound cathodes.

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We describe the use of a plasma-cathode electron source for electron beam evaporation of boron at forevacuum pressures (∼10 Pa) with subsequent deposition of boron-containing coatings on a titanium substrate. We analyze the process of electron beam heating and evaporation of boron, study the mass-to-charge composition of the gas and boron beam-produced plasma, apply such plasma for coating deposition, and investigate the elemental composition of the deposited film and its microhardness.

Boron at room temperature is insulating and therefore conventionally sputtered using radiofrequency (RF) power supplies including their power-matching networks. In this contribution we show that through a suitable ignition assistance, via temporary application of a high voltage (~ 600 V) to the substrate holder or auxiliary electrode, the magnetron discharge can be ignited using a conventional mid-frequency power supply without matching network.Once the discharge is ignited, the assisting voltage can be reduced to less than 50 V, and after the boron target surface is at elevated temperature, thereby exhibiting sufficient conductivity, the assisting voltage can be turned off. The deposition of boron and boron nitride films has been demonstrated with a deposition rate of approximately 400 nm/h for a power of 250 W.