Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

Sim, Kyu Ung; Shin, Seung Wook; Moholkar, A.V.; Yun, Jae Ho; Moon, Jong Ha; Kim, Jihun

doi:10.1016/j.cap.2010.02.028

Cited by 81 publications

(31 citation statements)

References 27 publications

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“…A CdS buffer layer on the CZTS absorber was deposited using a chemical bath deposition (CBD) process. The ZnO:Al window layer [23] was then deposited using an rf sputtering technique. An Al top grid on the ZnO:Al window layer was deposited using a vacuum evaporation method.…”

Section: Methodsmentioning

confidence: 99%

Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

Moholkar

Shinde

Babar

et al. 2011

Journal of Alloys and Compounds

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119

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Section: Methodsmentioning

confidence: 99%

Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

Moholkar

Shinde

Babar

et al. 2011

Journal of Alloys and Compounds

Self Cite

119

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“…It is possible for visible light larger than 400 nm to pass through only when the optical band gap of a TCO film exceeds 3.1 eV. The optical band gap of pure ZnO thin films is only about 3.3 eV . For SHJ solar cell applications, the wide optical band gap of the TCO films increases the optical utilization and reduces parasitic absorption by the TCO layer.…”

Section: Resultsmentioning

confidence: 99%

“…In-free ZnO-based TCO material has attracted great attention due to its low cost and low growth temperature. The optical band gap ( E g ) of ZnO (∼3.3 eV) is smaller than that of ITO (∼3.6 eV). , Since MgO has a wide band gap (∼6.7 eV), Mg can be introduced into ZnO as a dopant to increase the E g and thus improve optical transmission in the UV region. , On the other hand, group III elements such as B, ,− Al, − Ga, − and In , are commonly used for doping so as to ameliorate the electrical conductivities of ZnO films. The electrical properties of the doped ZnO films are improved while high visible transmittances are maintained.…”

Section: Introductionmentioning

confidence: 99%

“…The optical band gap (E g ) of ZnO (∼3.3 eV) is smaller than that of ITO (∼3.6 eV). 15,16 Since MgO has a wide band gap (∼6.7 eV), Mg can be introduced into ZnO as a dopant to increase the E g and thus improve optical transmission in the UV region. 17,18 On the other hand, group III elements such as B, 3,19−21 Al, 22−24 Ga, 25−27 and In 28,29 are commonly used for doping so as to ameliorate the electrical conductivities of ZnO films.…”

Section: Introductionmentioning

confidence: 99%

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Innovative Wide-Spectrum Mg and Ga-Codoped ZnO Transparent Conductive Films Grown via Reactive Plasma Deposition for Si Heterojunction Solar Cells

Zhou

Zhang

Chen

et al. 2020

ACS Appl. Energy Mater.

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In this work, wide-spectrum Mg and Ga-codoped ZnO (MGZO) transparent conductive films are developed via a reactive plasma deposition (RPD) technique with a soft thin-film growth process. MGZO film with a work function of ∼4.36 eV can be achieved within 12 min without any intentional substrate-heating treatment. The 480 nm-thickness MGZO film exhibits a low resistivity of ∼9.9 × 10–4 Ω cm and a high transmittance of ∼82.6% in the UV–vis–NIR region (λ approximately 400 nm–1200 nm). XRD spectra show that MGZO films exhibit (103) preferred orientation as the film thickness increases. A silicon heterojunction (SHJ) solar cell based on 480 nm-thick MGZO at the front side is completed. Excellent continuity of the MGZO film is proven by the cross-sectional SEM images, and there are no cracks and pinholes on the top or bottom of the c-Si pyramids. Further efficiency improvements are achieved using an ultrathin SnO x buffer layer with an ameliorated p-a-Si:H/TCO interface. Also, a silicon heterojunction (SHJ) solar cell using MGZO films on both sides is achieved with a conversion efficiency of 19.02%. These experimental results demonstrate that low-cost RPD-grown MGZO TCO materials could be commercially appropriate replacements for the conventional In2O3-based materials commonly used in SHJ solar cells and other optoelectronic devices.

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“…In general, undoped ZnO films have poor electrical properties due to the low carrier concentration. Doping ZnO with appropriate III-group impurities (Al, Ga, or In) can increase the electrical conductivity and optical properties of ZnO thin films [29][30][31]. Al-, Ga-, and Indoped ZnO (AZO, GZO, and IZO) films are transparent to most of the solar spectrum used for photovoltaic solar cells, and their sheet resistances are comparable to those of ITO films.…”

Section: Introductionmentioning

confidence: 99%

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

Seok

Ali

Seo

et al. 2019

Science and Technology of Advanced Materials

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Ga-doped ZnO (GZO)-graded layer, facilitating electron extraction from electron transport layer, was integrated on the surface of transparent indium tin oxide (ITO) cathode by using graded sputtering technique to improve the performance of planar n-i-p perovskite solar cells (PSCs). The thickness of graded GZO layer was controlled to optimize GZO-indium tin oxide (ITO) combined electrode for planar n-i-p PSCs. At optimized graded thickness of 15 nm, the GZO-ITO combined electrode showed an optical transmittance of 95%, a resistivity of 2.3 × 10 −4 Ohm cm, a sheet resistance of 15.6 Ohm/square, and work function of 4.23 eV, which is well matched with the 4.0-eV lowest unoccupied molecular orbital of [6,6]-phenyl-C 61-butyric acid methyl ester. Owing to enhanced extraction of electron by the graded GZO, the n-i-p PSC with GZO-ITO combined electrode showed higher power conversion efficiency (PCE) of 9.67% than the PCE (5.25%) of PSC with only ITO electrode without GZO-graded layer. In addition, the GZO integrated-ITO electrode acts as transparent electrode and electron extraction layer simultaneously due to graded mixing of the GZO at the surface region of ITO electrode.

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Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

Cited by 81 publications

References 27 publications

Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

Innovative Wide-Spectrum Mg and Ga-Codoped ZnO Transparent Conductive Films Grown via Reactive Plasma Deposition for Si Heterojunction Solar Cells

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

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