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2018 IEEE 68th Electronic Components and Technology Conference (ECTC) 2018
DOI: 10.1109/ectc.2018.00229
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Extremely Flexible (1mm Bending Radius) Biocompatible Heterogeneous Fan-Out Wafer-Level Platform with the Lowest Reported Die-Shift (<6 µm) and Reliable Flexible Cu-Based Interconnects

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Cited by 21 publications
(4 citation statements)
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“…Fukushima et al, have introduced special stress buffer layers to minimize stresses in metal structures [7]. Corrugated structures for Cu wires have been introduced by Hanna et al to improve the reliability of metal wires during bending [8].…”
Section: Bendability In Flexible Fan-out Processmentioning
confidence: 99%
“…Fukushima et al, have introduced special stress buffer layers to minimize stresses in metal structures [7]. Corrugated structures for Cu wires have been introduced by Hanna et al to improve the reliability of metal wires during bending [8].…”
Section: Bendability In Flexible Fan-out Processmentioning
confidence: 99%
“…We propose a structurally new FHE to address the abovementioned wire density, functional degradation, and fabrication issues. [23][24][25] The device uses inorganic single-crystal semiconductors, especially Si, and does not use organic, amorphous, or polycrystalline semiconductors. This concept is influenced by conventional 2D serpentine wire designs 26) and leverages a previously proposed 3D interconnect technology.…”
Section: Introductionmentioning
confidence: 99%
“…A structurally new FHE has been developed based on die-first/face-down FOWLP technology [16] with dielets using PDMS that has a low Young's modulus like a rubber and is curable at low temperature even at room temperature. The die-shift assessment has been given by UCLA [17] where the die shift is estimated to be < 6 μm. We believe that the curing shrinkage of mold compounds is independent on the die shift when molding with PDMS through additive polymerization because the curing shrinkage of the PDMS is approximately 1% or less.…”
Section: Introductionmentioning
confidence: 99%