A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel coating cycles required (i.e., more cost‐effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano‐scale due to the larger feature size‐to‐depth aspect ratio (critical for ultra‐high density non‐volatile memory applications). Utilizing the inverse proportionality between substrate's thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer‐less manufacturable process into a flexible form that matches organic electronics' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

There have been sustained interest in bifacial solar cell technology since 1980s, with prospects of 30-50% increase in the output power from a stand-alone single panel. Moreover, a vertical bifacial panel reduces dust accumulation and provides two output peaks during the day, with the second peak aligned to the peak electricity demand. Recent commercialization and anticipated growth of bifacial panel market have encouraged a closer scrutiny of the integrated power-output and economic viability of bifacial solar farms, where mutual shading will erode some of the anticipated energy gain associated with an isolated, single panel. Towards that goal, in this paper we focus on geography-specific optimizations of groundmounted vertical bifacial solar farms for the entire world. For local irradiance, we combine the measured meteorological data with the clear-sky model. In addition, we consider the detailed effects of direct, diffuse, and albedo light. We assume the panel is configured into sub-strings with bypass-diodes. Based on calculated light collection and panel output, we analyze the optimum farm design for maximum yearly output at any given location in the world. Our results predict that, regardless of the geographical location, a vertical bifacial farm will yield 10-20% more energy than a traditional monofacial farm for a practical row-spacing of 2m (1.2m high panels). With the prospect of additional 5-20% energy gain from reduced soiling and tilt optimization, bifacial solar farm do offer a viable technology option for large-scale solar energy generation.

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

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