Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy

Okoro, Chukwudi; Yu, Yang; Vandevelde, Bart; Swinnen, Bart; Vandepitte, Dirk; Verlinden, Bert; Wolf, Ingrid De

doi:10.1109/iitc.2008.4546912

Cited by 62 publications

(43 citation statements)

References 5 publications

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“…7 The defects act as RF signal "scattering centers" resulting in the increase in the insertion loss. Thus, proper interpretation of the RF signal loss traces could help pinpoint or classify defect types.…”

Section: Resultsmentioning

confidence: 99%

Broadband Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

You

Okoro

Ahn

et al. 2014

ECS J. Solid State Sci. Technol.

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In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non-destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal cycling on the RF signal characteristics (insertion loss (S 21 ) and return loss (S 11 )) is used to infer thermo-mechanical stress-induced defects in metal interconnects. The inferred defects are supported with physical analytical data where possible. In this paper, we discuss the use of broadband radio frequency (RF) to non-destructively identify and characterize performance-limiting defects in emerging nanoelectronic devices. To do this, we reinterpret previously published (mostly from reference 1), and some new data, to demonstrate the utility of RF phase data in failure mode analysis, to detect structural changes in devices, without resorting to the traditional destructive physical analysis.Emerging nanoelectronics are rapidly adapting three dimensional integrated circuits (3D-ICs), enabled by through-silicon vias (TSV), as a strategy to increase performance and functional diversification. However, the introduction of such 3D-ICs to the market has been hindered by reliability challenges such as stress related failures. Specifically, the stress buildup due to mismatch in the coefficient of thermal expansion (CTE) of the materials of construction results in the generation of defects such as cracks, voids, delamination, plastic deformation, substrate warping and buckling.1 These types of damage ultimately lead to open or short circuits in the devices, resulting in catastrophic failure. While metrology for accurate quantification of the impact of stress evolution in interconnect structures is needed, further insights are required to characterize and understand the physical damage stemming from the stress buildup. Microwave (RF)-based metrology tools offer several advantages over the traditional techniques and are uniquely suitable for studying the buried structures and interfaces inherent in such nanoelectronic devices. For example, changes in RF insertion losses offer early prognostics of the onset of failure in ball grid arrays (BGA) subjected to accelerated temperature cycling tests.2,3 RF measurements have also been used to specifically show that leakage conductance increased with the degree of voiding damage in Al and AlCu metal interconnects lines in integrated circuits.3 As well, such high frequency measurements have been used to monitor TSV interconnect performance.

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Section: Resultsmentioning

confidence: 99%

Broadband Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

You

Okoro

Ahn

et al. 2014

ECS J. Solid State Sci. Technol.

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show abstract

“…In one instance, circular copper TSV's of 5 µm diameter and 10 µm depth were built at a ∼9 µm pitch; chains were constructed using wafer to wafer bonding and the cumulative resistance was then measured [46]. The results showed good correlation with calculated values based on the geometry, with negligible contribution from bond interface resistance.…”

Section: Tsv Testingmentioning

confidence: 97%

“…The results showed good correlation with calculated values based on the geometry, with negligible contribution from bond interface resistance. The same study also compared tapered vias to straight vias, and concluded that tapered vias were superior in terms of seed coverage and via filling [46].…”

Section: Tsv Testingmentioning

confidence: 99%

3D integration review

Farooq¹,

Iyer²

2011

Sci. China Inf. Sci.

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3-D integration delivers value by increasing the volumetric transistor density with the potential benefit of shorter electrical path lengths through use of the shorter third dimension. Several researchers have studied various aspect of 3Di such as bonding level, through silicon via processes and integration, thermomechanical reliability of the vias, and the impact of the vias on devices. In this paper, we review some of the literature with a view to understanding the key options and challenges in 3Di. We also discuss some important applications of this technology, and the constraints that have to be overcome to make it work.

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“…[25][26][27][28][29][30][31][32] Micro-Raman spectroscopy is more suitable from a practical point of view. Since the probing depth of Raman spectroscopy is dependent on the excitation wavelength, choice of proper excitation wavelength is very important.…”

Section: Introductionmentioning

confidence: 99%

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Yoo¹,

Kim

Han

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Characterization of silicon stress near copper (Cu)-filled through-silicon via(s) (TSVs) was demonstrated using high-resolution micro-Raman spectroscopy. For depth profiling of Si stress distribution near TSVs, a polychromator-based, multiwavelength excitation Raman measurement with different probing depths was used. The design concept of the polychromator-based, multiwavelength micro-Raman spectroscopy system, including the importance of the high-spectral resolution and multiwavelength excitation capability in three-dimensional (3-D) Si stress characterization, was described. Silicon stress near Cu-filled TSVs, with various sizes and layouts, was measured and analyzed before and after Cu annealing steps. Main factors impacting Si stress near Cu-filled TSVs are analyzed based on Raman characterization results on various types of TSV structures, layouts, and Cu annealing conditions. Large variations in Si stress in TSV arrays were measured in wafers with poor Cu fill characteristics and in wafers annealed in nonoptimized conditions. The Cu annealing sequence and annealing conditions are found to be significantly important for managing Si stress and the reliability of Cu-filled TSVs. Substantially lower Si stress was measured near Cu-filled TSVs with voids. Multiwavelength microRaman spectroscopy can be used as a very effective noncontact, nondestructive, inline TSV process and Si stress monitoring technique.

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Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy

Cited by 62 publications

References 5 publications

Broadband Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

Broadband Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

3D integration review

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

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