Explanation for low-efficiency Cu2O Schottky-barrier solar cells

Olsen, L. C.; Bohara, R. C.; Urie, M. W.

doi:10.1063/1.90593

Cited by 187 publications

(90 citation statements)

References 1 publication

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“…9 In addition, the initial sputtering of the target in O 2 /Ar ambient provides for preferential oxidation of Si over Cu, thus generating free copper. 10 This leads to the formation of SiO x /Cu-rich Si layers in the Si surface. This facilitates the formation of copper silicide upon postannealing.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

Lee

Nam

et al. 2011

Journal of Elec Materi

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A Cu alloy/Cu alloy oxide bilayer structure was formed on an n + -a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O 2 /Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide-a-Si:H interface. This bilayer turned into an SiO x /Cu 3 Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

Lee

Nam

et al. 2011

Journal of Elec Materi

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“…However, earlier reports indicate that the junctions that form when Au is deposited on Cu 2 O are essentially ohmic in nature [5]. In order to verify the Schottky junction formation when Cu 2 O thin films are fabricated on gold substrates, we measured the current voltage (I-V) characteristics of one of the samples.…”

Section: Interfacial Alloy Formationmentioning

confidence: 99%

“…One of the surprising results of this work is that cuprous oxide (Cu 2 O) thin films deposited on gold substrates emit strong THz pulses in this manner. The emission is particularly unexpected because the interfaces formed by depositing Au on Cu 2 O are ohmic junctions rather than Schottky junctions [5].…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of gold-cuprous oxide interfaces for terahertz emission applications

et al. 2014

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We show that the interface between gold and thermally formed cuprous oxide, which emits terahertz radiation when illuminated with ultrafast femtosecond lasers, is in fact an AuCu∕Cu 2 O interface due to the formation of the thermal diffusion alloy AuCu. The alloy enables the formation of a Schottkybarrier-like electric field near the interface which is essential to explain the THz emission from these samples. We confirm the formation of this AuCu layer by x-ray diffraction measurements, ellipsometry, and visual inspection. We determined the frequency-dependent complex refractive indices of the Cu 2 O and AuCu layer and verified them using reflection spectroscopy measurements. These refractive indices can be used for optimizing the thickness of Cu 2 O for maximum THz emission from these interfaces.

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“…This modified interface still results in charge carrier separation and extraction, but it does lower the maximum achievable V oc value. 52 We would expect better performance if the contact geometry was reversed, allowing for a Schottky junction along the whole length of the metal core, but such a low work function metalsemiconductor core-shell structure has not been synthesized so far. 40 A more detailed discussion about the influence of the interfaces and the effect of the Schottky junction can be found in the conclusions.…”

Section: -26mentioning

confidence: 99%

Au-Cu2O core-shell nanowire photovoltaics

Oener

Mann

Sciacca

et al. 2015

Applied Physics Letters

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Semiconductor nanowires are among the most promising candidates for next generation photovoltaics. This is due to their outstanding optical and electrical properties which provide large optical cross sections while simultaneously decoupling the photon absorption and charge carrier extraction length scales. These effects relax the requirements for both the minority carrier diffusion length and the amount of semiconductor needed. Metal-semiconductor core-shell nanowires have previously been predicted to show even better optical absorption than solid semiconductor nanowires and offer the additional advantage of a local metal core contact. Here, we fabricate and analyze such a geometry using a single Au-Cu2O core-shell nanowire photovoltaic cell as a model system. Spatially resolved photocurrent maps reveal that although the minority carrier diffusion length in the Cu2O shell is less than 1 μm, the radial contact geometry with the incorporated metal electrode still allows for photogenerated carrier collection along an entire nanowire. Current-voltage measurements yield an open-circuit voltage of 600 mV under laser illumination and a dark diode turn-on voltage of 1 V. This study suggests the metal-semiconductor core-shell nanowire concept could be extended to low-cost, large-scale photovoltaic devices, utilizing for example, metal nanowire electrode grids coated with epitaxially grown semiconductor shells.

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Explanation for low-efficiency Cu2O Schottky-barrier solar cells

Cited by 187 publications

References 1 publication

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

Optical characterization of gold-cuprous oxide interfaces for terahertz emission applications

Au-Cu2O core-shell nanowire photovoltaics

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