Experimental validation of IGBT thermal impedances from voltage-based and direct temperature measurements

Achiri, Humphrey Mokom Njawah; Streit, Lubos; Šmı́dl, Václav; Peroutka, Zdeněk

doi:10.1109/iecon.2016.7793673

Cited by 6 publications

(5 citation statements)

References 12 publications

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“…Calibration curves for maximum and average measured temperatures are used in recomposing the junction temperatures for the transistors and diodes. As described in [22], the thermal impedances and capacitances are extracted by curve fitting methods from Equation (14). By placing the temperatures sensor closed to the transistors and diodes in the open IGBT module, the measured temperature is close to the junction temperature as observed by the infrared camera.…”

Section: Experimental Results With Tsep Methodsmentioning

confidence: 99%

“…Two types of RC-circuit thermal networks are most frequently used in thermal modelling of an IGBT module: Foster network [3,14,15] and Cauer network [16,17]. Thermal impedances of RC thermal networks can be determined using finite element methods [18][19][20], VCE (collector-emitter voltage) measurement methods (thermo-sensitive electrical parameter-TSEP) [21][22][23][24][25], or direct temperature measurements using sensors [21,26]. Finite element methods are suitable in the determination of parameters of both Cauer and Foster networks.…”

Section: Introductionmentioning

confidence: 99%

“…In [22], methods for determining thermal impedances from VCE based TSEP and direct temperature measurement were presented and validated using measurements from an infrared camera. In this paper, a similar experimental setup is used, but a novel method for extracting the thermal impedance parameters using the well-known least squares method is presented.…”

Section: Introductionmentioning

confidence: 99%

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Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

et al. 2020

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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Section: Experimental Results With Tsep Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

et al. 2020

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“…15) In this method, heat is first applied to a certain die until the temperature of the entire PM becomes constant. Then, the die heating is turned off, and the temperature transition of each die in the PM is measured using a temperature-sensitive electrical parameter (TSEP), 27,30) such as temperature dependence of on-resistance and gate threshold voltage (V th ) of each die.…”

Section: Proposed Characterization Methods For Sic Mosfet-based Pmmentioning

confidence: 99%

Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Nakamura¹,

Kuroda²,

Nakahara³

et al. 2022

Jpn. J. Appl. Phys.

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This paper presents an experimental evaluation of the thermal couple impedance model of power modules (PMs), in which Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Eﬀect-Transistor (MOSFET) dies are implemented. The model considers the thermal cross-coupling eﬀect, representing the temperature rise of a die due to power dissipations by the other dies in the same PM. We propose a characterization method to obtain the thermal couple impedance of the SiC MOSFET-based PMs for model accuracy. Simulation based on the proposed model accurately estimates the measured die temperature of three PMs with diﬀerent die placements. The maximum error between measured and simulated die temperatures is within 8.1 ◦C in a wide and practical operation range from 70 ◦C to 200 ◦C. The thermal couple impedance model is helpful to design die placements of high power PMs considering the thermal cross-coupling eﬀect.

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“…The most suitable and commonly used method for such problems is the mathematical Foster R-C network. This method fits a multiple term exponential equation, of the form of (4), to the transient thermal impedance curve of each device under self-heating and cross-heating [17]:…”

Section: Thermal Impedance Networkmentioning

confidence: 99%

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Trentin

Hind

Degano

et al. 2018

2018 IEEE Energy Conversion Congress and Exposition (ECCE)

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The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.I.

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Experimental validation of IGBT thermal impedances from voltage-based and direct temperature measurements

Cited by 6 publications

References 12 publications

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

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