Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Abstract

This paper presents an experimental evaluation of the thermal couple impedance model of power modules (PMs), in which Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) dies are implemented. The model considers the thermal cross-coupling effect, representing the temperature rise of a die due to power dissipations by the other dies in the same PM. We propose a characterization method to obtain the thermal couple impedance of the SiC MOSFET-based PMs for model accuracy. Simulation based on the proposed model accurately estimates the measured die temperature of three PMs with different die placements. The maximum error between measured and simulated die temperatures is within 8.1 ◦C in a wide and practical operation range from 70 ◦C to 200 ◦C. The thermal couple impedance model is helpful to design die placements of high power PMs considering the thermal cross-coupling effect.

Thermal Analysis of Si-Igbt Based Power Electronic Modules in 50kw Traction Inverter Application

“…However, the work did not demonstrate the thermal interaction between other chips and ignore the influence of lateral heat transfer coming from other devices. Another thermal model based on thermal coupling between different dies of SiC were demonstrated and experimentally evaluated in [43]. However, this thermal model focused on only junction temperature estimation and considered the heatsink at a constant temperature of 60 • C but did not show any detail thermal interaction at the critical layers of power modules due to different loading dynamics, ambient temperature dynamics, flow rate variation and thermal interface material impact etc.…”