Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.I.

A Multiport Power Electronics Converter for Hybrid Traction Applications

“…As power electronics designs for traction applications must feature high power density and reliability at a cost-effective price point, high frequency pulse width modulation switching is utilised with high rated, low losses devices-Silicon Carbide MOSFET. A bespoke SiC MOSFET was designed for this application considering the expected losses for the switching frequency and operational load point as described in [16]. This results in physically smaller magnetic components and fewer overall active devices in the converter package.…”

“…As described in [16], the losses in the SiC MOSFET were considered for estimated power factor, switching frequency and collector current during acceleration of the motor from standstill. Next the propagation of losses was studied using RC thermal networks to understand their impact on mechanical integrity and therefore, reliability.…”