Experimental study on effect of second-harmonic injection at input of classes F and F−1 GaN power amplifiers

Ramadan, Alaaeddine; Reveyrand, Tibault; Martin, Audrey; Nébus, Jean-Michel; Bouysse, Philippe; Lapierre, L.; Villemazet, J.F.; Forestier, S.

doi:10.1049/el.2010.0392

Cited by 16 publications

(9 citation statements)

References 9 publications

(6 reference statements)

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“…Type Device Input Harmonics Approach [10] class-F, class-F −1 GaN f o , 2f o harmonic tuning [11] class-F, class-B PHEMT f o , 2f o device level [12] class-F, class-F −1 AlGaAs/GaAsN f o , 2f o phase relationship [13] class-FG, class-E GaAs MESFET f o , 2f o power balance [14] class-F Power MESFET f o , 2f o load/source pull [15] class This paper extends the investigation of input harmonic impedance to include the effect of third harmonic terminations on the power efficiency of a class-F amplifier. A systematic comparison of the power efficiency for a design with fundamental, second harmonic, and third harmonic terminations is made.…”

Section: Refmentioning

confidence: 99%

“…The design uses a 10 W GaN power device from Cree and includes fundamental, second and third harmonic matching networks in both the input and output circuits. The experimental work is new and includes a third harmonic input impedance which has not be reported in other experiment results [10][11][12][13][14][15][16].…”

Section: Refmentioning

confidence: 99%

“…The relationship between power efficiency and input harmonic impedances for class-F amplifiers has been studied by others [10][11][12][13][14][15][16] and a summary is presented in Table 1. Most work listed in the table has focused on evaluating the effect of fundamental and second harmonic impedance terminations at the input of the device.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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Abstract-In this paper, the design of a class-F radio frequency power amplifier with a multiharmonic input transmission line network is presented. Harmonic signal components at the gate come from several sources including nonlinear device capacitances and imperfect output harmonic terminations that create harmonic components that are fed back to the gate through the gate-drain capacitance. The effect of these harmonic generation mechanisms and the potential to shape the gate waveform to improve power efficiency are investigated. The study shows that a second harmonic short is most beneficial and the effect of a third harmonic termination is less significant. The concepts are applied to the design of a 10 W GaN class-F amplifier and the design is supported by theoretical, simulation and experimental results. The fabricated design has a measured drain efficiency of 78.8% at an output power of 40.5 dBm for a frequency of 990 MHz. The amplifier was also tested with a 8.8 dB peak-to-average power ratio 5 MHz WCDMA signal. With the modulated signal, the adjacent channel power ratio was −33.1 dBc at a drain efficiency of 46.1% without predistortion correction.

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Section: Refmentioning

confidence: 99%

Section: Refmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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“…They provide good understanding of device behavior and also generate extremely useful data for the investigation of device behavior and its nonlinear modeling using modern computer aided design tools [5,6]. The ability to visualize waveforms helps in the determination of the optimal device operating point and performance, whereas the shape of the waveform aids the amplifier designers in determining the appropriate input and output impedances and, in turn, the matching circuits.…”

Section: Introductionmentioning

confidence: 99%

Systematic Calibration of Two-Port Network Analyzer for Measurement and Engineering of Waveforms at Radio Frequency

El-Deeb¹,

Hashmi

Boulejfen³

et al. 2012

PIER C

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Abstract-This paper reports algorithm and technique for the accurate phase calibration in order to measure current and voltage waveforms at the terminals of two-port microwave devices. The calibration approach presented in this paper does not require any multi-harmonic coherent signal generator and golden standard, reported in earlier papers, thus allowing the system to be more reliable, generic and accurate. The results achieved using the reported calibration algorithm on a developed measurement setup shows good agreement with those obtained on a standard commercial scope. In the end, it has been shown that the developed algorithm and measurement setup can be adapted for carrying out waveform engineering which clearly identifies the application of this work in the characterization and measurement of microwave devices.

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“…Minimized overlapping between drain-current and drain-source voltage indicates a minimized dissipated power. Recently we have reported in [20] and [21] an experimental study and calibrated time-domain waveform measurements concerning PAE enhancement conditions of GaN HEMTs with active second harmonic injection at the gate port.…”

Section: Introductionmentioning

confidence: 99%

Two-Stage GaN HEMT Amplifier With Gate–Source Voltage Shaping for Efficiency Versus Bandwidth Enhancements

Ramadan¹,

Reveyrand²,

Martin³

et al. 2011

IEEE Trans. Microwave Theory Techn.

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In this paper a two-stage 2-GHz GaN HEMT amplifier with 15-W output power, 28-dB power gain, and 70% poweradded efficiency (PAE) is presented.The power stage is designed to operate under class F conditions. The driver stage operates under class F 1 conditions and feeds the power stage with both fundamental and second harmonic components. The inter stage matching is designed to target a quasi-half sine voltage shape at the intrinsic gate port of the power stage. The goal is to reduce aperture angle of the power stage and get PAE improvements over a wide frequency bandwidth.In addition to the amplifier design description, this paper reports original time-domain waveform measurements at internal nodes of the designed two-stage power amplifier using calibrated high-impedance probes and large signal network analyzer. Furthermore, waveform measurements recorded at different frequencies show that aperture angle remains reduced over large frequency bandwidth. In this study, a PAE greater than 60% is reached over 20% frequency bandwidth. Index Terms-Aperture angle, classes F and F 1 , GaN power amplifier (PA), power-added efficiency (PAE), waveform measurements.

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Experimental study on effect of second-harmonic injection at input of classes F and F−1 GaN power amplifiers

Cited by 16 publications

References 9 publications

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Systematic Calibration of Two-Port Network Analyzer for Measurement and Engineering of Waveforms at Radio Frequency

Two-Stage GaN HEMT Amplifier With Gate–Source Voltage Shaping for Efficiency Versus Bandwidth Enhancements

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