Experimental study of a radio-frequency Ionized Physical Vapour Deposition process: Contamination by the internal coil

Imbert, Jean-Christophe; Poucques, Ludovic de; Boisse‐Laporte, C.; Bretagne, J.; Hugon, M. C.; Pagnon, Daniel; Pitach, P.; Teulé‐Gay, Lionel; Touzeau, M.

doi:10.1016/j.tsf.2007.08.119

Cited by 7 publications

(10 citation statements)

References 20 publications

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“…Some difficulties, however, must be tackled in RF-IPVD processes. Indeed, the necessary modifications of the reactor chamber design and the fact that the internal antenna immersed in the reactor could pollute the deposition process [13][14][15] are potentially inconvenient for some applications. Moreover, the degree of ionization may be too low for specific applications such as the filling of trenches, as well as for new functional coating demands.…”

Section: Introductionmentioning

confidence: 99%

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Farsy

Ledig

Desecures

et al. 2019

Plasma Sources Sci. Technol.

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10We report in this work the investigation of the transport behavior of Ti neutral atoms 11 sputtered in reactive high power impulse magnetron sputtering (R-HiPIMS) device 12 used for TiN coating deposition. The time resolved tunable diode laser induced 13 fluorescence (TR-TDLIF), previously developed to study the transport of tungsten 14 atoms, was improved to measure Ti neutral atoms velocity distribution functions. We 15 find that the TR-TDLIF signal has to be fitted using three Gaussian distributions, 16 corresponding to the energetic (EN), thermalized (TH) and quasi-thermalized (QTH: 17 TH atoms with non-zero mean velocity) atoms populations. Then, the ability to 18 distinguish populations of atoms and to determine their corresponding deposited flux 19 and energy may be of great interest to control film properties as desired for targeted 20 applications. From the fitting, the vapor transport parameters (flux and energy) are 21 calculated and studied as function of distance from the target, pressure and percentage 22 of nitrogen in Ar/N2 gas mixture. The study focuses on the effect of added nitrogen on 23 the transport of sputtered atoms. 24 Keywords: time resolved tunable diode laser induced fluorescence, reactive 25 magnetron sputtering, high power impulse magnetron sputtering (HiPIMS), atoms 26 velocity distribution function, transport of sputtered atoms, titanium, nitrogen 27 I. Introduction 28 Since the 1970s, magnetron sputtering (MS) process has been developed for the growth of 29 thin films by physical vapor deposition (PVD) [1]. The developments of conventional reactive 30 direct current (R-dcMS) and radiofrequency (R-rfMS) magnetron sputtering methods allow 31 the deposition of a wide range of thin films of materials such as metals, oxides, nitrides, 32 ceramics, etc. [2]. Consequently, MS is a widely used deposition technology in many 33 industrial applications.34 2 In conventional magnetron sputtering discharges, sputtered species are mainly emitted by 35 the cathode as neutral particles and ions of the sputtered material do not contribute 36 significantly to the deposition process. Ionized Physical Vapor Deposition (IPVD) reactors 37have then been developed since the 1990s to improve the quality of deposited films in terms 38 of mechanical properties (higher density, reduced porosity, better resistance to corrosion) and 39 of conformity for deposition on complex substrate geometry [3][4][5][6][7][8]. The main goal of IPVD is 40 to ionize a fraction of neutral species sputtered from the magnetron target in order to transfer 41 potential energy to ions, and to collimate and control the obtained ion particle fluxes by 42 applying a negative bias voltage to the substrate. IPVD reactors consist of a magnetron 43 discharge assisted by an additional plasma source, located in the area between the substrate 44 and the magnetron cathode, which ionizes the sputtered vapor flowing from the magnetron. 45Reactors using helicon [9], electron cyclotron resonance (ECR) coupled discharge [10] or 46 microw...

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Section: Introductionmentioning

confidence: 99%

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Farsy

Ledig

Desecures

et al. 2019

Plasma Sources Sci. Technol.

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“…Deposition of 30-nm ITO thin film was performed in room temperature in an ionized physical vapor deposition (IPVD) system, a DC magnetron sputtering system equipped with inductively coupled plasma (ICP). [18][19][20] Ar-diluted O 2 gas (0.4%) and an ITO target (3 wt % SnO 2 -doped In 2 O 3 ) were used for the deposition. The DC sputtering power and the ICP power for the ITO deposition were 600 and 400 W, respectively.…”

Section: Methodsmentioning

confidence: 99%

Effects of Nb₂O₅and SiO₂buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Hong¹,

Shin²,

Park³

et al. 2014

Jpn. J. Appl. Phys.

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We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K + ) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb 2 O 5 /SiO 2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120 Ω/sq and optical transmittance higher than 90% (at 550 nm) has been achieved.

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“…On the other hand, Imbert at al. reported that in case of the different materials, namely, ICP coil made by steel and Ti target, a sufficient pre-sputtering of Ti target could keep away the Fe contamination [15], but it would be still a temporary method.…”

Section: Contamination Issue From Icp Tubementioning

confidence: 99%

Low temperature fabrication of indium-tin oxide film by using ionized physical vapor deposition method

Cheong

Hong

Shin

et al. 2015

Surface and Coatings Technology

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Experimental study of a radio-frequency Ionized Physical Vapour Deposition process: Contamination by the internal coil

Cited by 7 publications

References 20 publications

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Effects of Nb₂O₅and SiO₂buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Low temperature fabrication of indium-tin oxide film by using ionized physical vapor deposition method

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Experimental study of a radio-frequency Ionized Physical Vapour Deposition process: Contamination by the internal coil

Cited by 7 publications

References 20 publications

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N2 HIPIMS discharges

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N2 HIPIMS discharges

Effects of Nb2O5and SiO2buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass

Low temperature fabrication of indium-tin oxide film by using ionized physical vapor deposition method

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Product

Resources

About

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Characterization of transport of titanium neutral atoms sputtered in Ar and Ar/N₂ HIPIMS discharges

Effects of Nb₂O₅and SiO₂buffer layers on the suppression of potassium out-diffusion into indium tin oxide electrode formed on chemically strengthened glass