Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects

Abstract

A . T o r i u m i , M . Y o s h i m i , M . I w a s e a n d K . T a n i g u c h i VLSI R e s e a r c h C e n t e r , T o s h i b a C o r p o r a t i o n 1 , K o m u k a i T o s h i b a -c h o , S a i w a i -k u , K a w a s a k i 2 1 0 , J a p a n ABSTRACT P h o t o n e m i s s i o n d u e t o h o t -c a r r i e r e f f e c t

Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region

“…The light emission mechanism was investigated earlier by observing the photo-generated minority carrier current collected by a nearby junction [2][3][4][5]7]. A theoretical formulation of the hot-electron-induced photon emission phenomenon was presented by Tam and Hu [3] based on the 'lucky-electron' concept and the Bremsstrahlung mechanism.…”

Test structures for analysis and parameter extraction of secondary photon-induced leakage currents in CMOS DRAM technology

“…Toriumi [2], and N. Tsutsu [4], significant understanding can be achieved on hot carrier effects, transconductance degradation, and GIDL-induced leakage mechanisms in high electric-field silicon devices.…”