Excitation and De-Excitation Mechanisms of Rare-Earth Ions in III-V Compounds: Optically Detected Microwave-Induced Impact Ionization of Yb Dopant in Inp

Gregorkiewicz, T.; Liesertr, B.J. Heijmink; Tsimperidis, Ioannis; Maat-Gersdorf, I. de; Ammerlaan, C.A.J.; Godlewski, M.; Scholz, F.

doi:10.1557/proc-301-239

Cited by 3 publications

(1 citation statement)

References 25 publications

(54 reference statements)

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“…Trap- ping by shallow acceptors might be expected to reduce Er 3ϩ luminescence, as it is believed that rare-earth excitation does not occur through neutral donor-acceptor pair recombination. 35 Furthermore, as discussed earlier, excess free holes may be important for driving the formation of bound excitons and overcoming bound exciton thermalization. In this case, the freezing out of holes onto shallow acceptors would have a detrimental effect upon Er 3ϩ excitation and luminescence.…”

Section: Temperature Dependencementioning

confidence: 88%

Photoluminescence and free carrier interactions in erbium-doped GaAs

Culp

Cederberg

Bieg

et al. 1998

Journal of Applied Physics

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The photoluminescence properties of GaAs:Er doped with a new pyrazole and pyridine-based Er source, tris͑3,5-di-tert-butylpyrazolato͒bis͑4-tert-butylpyridine͒erbium͑III͒, were investigated. These samples showed significantly stronger and sharper 1.54 m Er 3ϩ luminescence than in GaAs:Er samples doped with cyclopentadienyl-based Er sources. The efficient luminescence was associated with the Er-2O center, formed with unintentional oxygen impurities. The Er 3ϩ emission was greatly reduced in n-type samples, whereas the emission remained strong in p-type samples. This trend suggests that either the free hole concentration is very important to the Er 3ϩ excitation efficiency, and/or there is a strong Auger quenching mechanism which involves free electrons. A model based on the results of a two-beam experiment indicates the presence of strong Auger energy transfer from the Er-bound exciton to a free electron. Auger energy transfer from the excited Er 3ϩ ion to a free electron was found to be much less important. The temperature dependence of the Er 3ϩ emission was also examined. A decrease in intensity was observed at the lowest temperatures. This effect was attributed to the freeze-out of carriers onto a relatively shallow trap which could be related to either Er or shallow acceptors.

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Section: Temperature Dependencementioning

confidence: 88%

Photoluminescence and free carrier interactions in erbium-doped GaAs

Culp

Cederberg

Bieg

et al. 1998

Journal of Applied Physics

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Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors

Godlewski

Chen

Ḿonemar

1994

Critical Reviews in Solid State and Materials Sciences

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Novel applications of the technique of optically detected cyclotron resonance (ODCR) are discussed. This method is an extension of the conventional cyclotron resonance investigations and shows important advantages when applied to characterization of semiconductor materials. These advantages are due to a higher sensitivity and a longer momentum relaxation time caused by photoneutralization of ionized impurities. This in turn enables experiments at lower magnetic fields and lower microwave radiation frequency. Photoexcitation used in ODCR often results in a simultaneous observation of electron and hole cyclotron resonances in the same sample, which is a rare case in a conventional CR study. High magnetic field far infrared ODCR experiments utilize all these advantages of the method. For the most common X-band (10 GHz) microwave setups, the ODCR resolution often is too low to allow accurate CR determination of the band structure parameters of the material studied. In that case, ODCR may be used for highresolution photoluminescence experiments and for identification of carrier capture and recombination paths at impurities, as was proposed recently. These new and important applications of the ODCR technique are described here, and documented by recent experimental results. The mechanism of ODCR detection for pure and doped semiconductors is discussed, and a prominent role of the impact ionization mechanism is demonstrated. This is followed by a discussion of recent applications of ODCR for identification of recombination mechanisms. Then high spectral resolution ODCR experiments are described, with the example of overlapping free-to-bound and donor-acceptor pair transitions. Some special applications of ODCR are demonstrated. ODCR also can be applied to analyze quantum confinement of carriers in two-dimensional (2D) structures such as heterojunctions and quantum wells. It is shown that useful information can be obtained on the electronic properties of the 2D electron (or hole) gas and the interlayer carrier transfer enhanced by carrier heating at CR absorption in such structures.

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The 4f Intrashell Transitions of Ytterbium in Indium Phosphide

et al. 1996

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Zeeman measurements in magnetic fields up to 16 T have been performed on the no-phonon lines labelled #3, #4, and #8 of the spectrum of ytterbium impurities in indium phosphide. A strong polarization effect and changes in intensities were observed. An energy level diagram is presented that satisfactorily explains the magnetic field effect and the relative intensities of the photoluminescence lines and is consistent with experiments described in the literature.

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Excitation and De-Excitation Mechanisms of Rare-Earth Ions in III-V Compounds: Optically Detected Microwave-Induced Impact Ionization of Yb Dopant in Inp

Cited by 3 publications

References 25 publications

Photoluminescence and free carrier interactions in erbium-doped GaAs

Photoluminescence and free carrier interactions in erbium-doped GaAs

Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors

The 4f Intrashell Transitions of Ytterbium in Indium Phosphide

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