Evolution of the phases and chemical composition during the formation of CIS thin films prepared by interdiffusion process in selenides layers

Teheran, P.; Cediel, G.; Caicedo, Luis; Cota, L.; Leal, H.; Rodríguez, J. Arbey; Gordillo, G.

doi:10.1016/s0022-0248(97)00424-7

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…Spot EDS analysis (not shown) indicated that the larger grain structures were extremely In-rich. Similar structures were reported by other workers [6] who suggested that the anomalous growth behaviour, especially during the initial stages of growth, is attributed to the formation of InSe grains.…”

Section: Selenizationsupporting

confidence: 90%

Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys

Sheppard¹,

Alberts²

2006

J. Phys. D: Appl. Phys.

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The reaction of dc sputtered metallic CuIn alloys to a reactive H2Se/Ar/H2S gaseous atmosphere is an attractive industrial production process to produce CuIn(Se,S)2 chalcopyrite absorber films for applications in photovoltaic modules. However, the obvious technological advantages of this deposition technology are overshadowed by growth-related anomalies such as the separation or at least partial separation of the ternary phases (i.e. CuInSe2 and CuInS2) during the high temperature selenization/sulphurization of the metallic alloy. This in turn prevents the effective band gap widening of the semiconductor alloys in order to achieve open-circuit voltages in excess of 600 mV, which is a critical prerequisite for the optimal performance of thin film solar modules. In this contribution, the material properties of homogeneous single-phase CuIn(Se,S)2 alloys are discussed, produced with a novel two-stage deposition process.

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Section: Selenizationsupporting

confidence: 90%

Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys

Sheppard¹,

Alberts²

2006

J. Phys. D: Appl. Phys.

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“…The endothermic signal D ( Fig. 2) at 340 C indicates an a-In 2 Se 3 to b-In 2 Se 3 phase transformation (theoretical w350 C [17]). In Fig.…”

Section: Resultsmentioning

confidence: 97%

Phase evolution of CIGS alloyed compound synthesis by direct melting method

Baek¹,

Astini²,

Tirta³

et al. 2011

Current Applied Physics

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“…The results were calculated using a GMR electron probe thin film microanalysis program. 53 Density values of 5.99 g/cm 3 for Cu 2Ϫx Se, 54 5.77 g/cm 3 for CuInSe 2 , 40 and 10.2 g/cm 3 for Mo 40 were used in the thickness calculations.…”

Section: Methodsmentioning

confidence: 99%

One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

Kemell¹,

Ritala²,

Saloniemi³

et al. 2000

J. Electrochem. Soc.

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The induced co-deposition mechanism in one-step electrodeposition of Cu 2Ϫx Se and CuInSe 2 thin films was investigated. Cu 2Ϫx Se and CuInSe 2 thin films were deposited potentiostatically on Mo substrates by a one-step process from an acidic electrolyte containing SCN Ϫ ions as complexing agents. The films were examined by scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and ion beam analysis methods. Good control of stoichiometry was achieved over a wide potential range, thus indicating that the film composition may indeed be controlled by the induced co-deposition mechanism. The effects of the thiocyanate ions on the reduction potentials of Cu ϩ , In 3ϩ , and Se 4ϩ ions were examined by cyclic voltammetry. In order to improve their crystallinity, the CuInSe 2 films were annealed under a N 2 atmosphere after deposition.

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Evolution of the phases and chemical composition during the formation of CIS thin films prepared by interdiffusion process in selenides layers

Cited by 8 publications

References 9 publications

Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys

Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys

Phase evolution of CIGS alloyed compound synthesis by direct melting method

One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

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Evolution of the phases and chemical composition during the formation of CIS thin films prepared by interdiffusion process in selenides layers

Cited by 8 publications

References 9 publications

Deposition of single-phase CuIn(Se,S)2thin films from the sulfurization of selenized CuIn alloys

Deposition of single-phase CuIn(Se,S)2thin films from the sulfurization of selenized CuIn alloys

Phase evolution of CIGS alloyed compound synthesis by direct melting method

One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

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Product

Resources

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Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys

Deposition of single-phase CuIn(Se,S)₂thin films from the sulfurization of selenized CuIn alloys