One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

Kemell, Marianna; Ritala, Mikko; Saloniemi, Heini; Leskelä, Markku; Sajavaara, Timo; Raühala, E.

doi:10.1149/1.1393317

Cited by 65 publications

(78 citation statements)

References 47 publications

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“…(5)) [21] and this reduction feature shows a significant positive shift (from À0.85 V to À0.64 V). This positive shift may be explained by the generation of CuSe according to Eq.…”

Section: Resultsmentioning

confidence: 96%

“…Employing complexing agents is one of the most effective methods for this task. Many complexing agents, have been studied in electrodeposition of CIS and CIGS, including citrate [15,16], triethanolamine [17,18], ethylene diamine [19], thiocyanate [20,21], EDTA [22], benzotriazole [23] and so on. These complexing agents are widely used in basic copper plating baths and can form stable complexes with copper in basic solutions.…”

Section: Introductionmentioning

confidence: 99%

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Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Liu

Lai

et al. 2011

Journal of Electroanalytical Chemistry

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“…(5)) [21] and this reduction feature shows a significant positive shift (from À0.85 V to À0.64 V). This positive shift may be explained by the generation of CuSe according to Eq.…”

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Liu

Lai

et al. 2011

Journal of Electroanalytical Chemistry

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“…Kemell et al reported that CuSe phase enables the incorporation of In 3+ ions by induced co-deposition process [110]. Chassaing and co-workers reported that In 3+ inclusion takes place when the [Se/Cu] ratio is greater than 1 to form CuInSe 2 .…”

Section: Electrochemical Formation Mechanism Of Cise/cigsementioning

confidence: 99%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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“…Various electorodeposition processes have been studied in an attempt to attain a CIS-based film with smooth surface, suitable stoichiometry, compact crystalline, and large grain size [25][26][27][28][29][30]. CIS-based film with Cu-rich stoichiometry usually has a smooth surface and compact crystalline with large grain size [31,32].…”

Section: Introductionmentioning

confidence: 99%

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

Huang

Liu

Hung

et al. 2014

J Mater Sci: Mater Electron

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Cu-poor electrodepositedCuIn 1-x Al x Se 2 (CIAS) precursor films were prepared to investigate the alteration in surface morphology of post-annealed CIAS films through post-annealing temperature adjustment. Scanning electron microscopy (SEM) and atomic force microscope (AFM) analyses demonstrated that surface morphology and root-mean-square (RMS) roughness of post-annealed CIAS films exhibited uneven and rough triangular structures. The crystal size of post-annealed CIAS films can be increased by increasing post-annealing temperature. The precursor film structure was modified by substituting Cu-Se/CIAS binary structure with CIAS single structure to proceed with the investigation. The apparent variation in surface morphology of post-annealed CIAS films changed from rough triangular structures to smooth round structures, and the RMS roughness of post-annealed CIAS films was reduced to \100 nm. The reduction was attributed to the formation of Cu-Se liquid phases during the post-annealing process, which enhanced elemental migration, recombination, and promotion of large grains and smooth surface formation. X-ray diffraction patterns showed three preferred growth orientations along the (112), (204/220), and (116/312) planes with chalcopyrite structures for all species. In addition, the characteristics of surface morphology, RMS roughness, and current measurement of subsequently deposited cadmium sulfide (CdS) film were studied and examined via SEM and AFM analyses. The surface morphology of CdS films deposited on binary structure post-annealed CIAS films exhibited smoothness, compactness, small RMS roughness, and large crystals with round and film-like structure. The AFM current images indicated that the distribution of leakage current paths was greatly diminished by changing the precursor film structure from CIAS single structure to CuSe/CIAS binary structure. The dark current-voltage characteristics of the CdS/CIAS heterojunctions showed that the reverse dark current density was decreased by approximately one order of magnitude from 4.02 9 10 -4 (single structure) to 4.26 9 10 -5 A/cm 2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells was enhanced from 0.52 (single structure) to 1.44 % (binary structure) with increase in V oc and J sc .

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One-Step Electrodeposition of Cu[sub 2−x]Se and CuInSe[sub 2] Thin Films by the Induced Co-deposition Mechanism

Cited by 65 publications

References 47 publications

Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

A short review on the advancements in electroplating of CuInGaSe2 thin films

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

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