A parameter set was found which allows depositing ZnSe thin films with good properties to be used as buffer layer in solar cells with ZnO/ZnSe/CIGS structure. In this way, the ZnSe compound could be used in substitution of the CdS which is a toxic material generally used as buffer layer in Cu(In,Ga)Se2 (CIGS) based solar cells. The influence of the deposition parameters on the structural, optical and morphological properties of ZnSe films deposited on glass substrates by evaporation, was determined through XRD, spectral transmittance and AFM measurements.
InxSey thin films were deposited by co‐evaporation of In and Se and characterized through XRD (X‐ray diffraction), spectral transmittance and AFM (atomic force microscopy) measurements. This material will later be employed as buffer layer and/or as precursor of CuInSe2(CIS) thin films used as absorber layer in thin film solar cells. The aim of this work is to obtain deposition conditions for InxSey films to use them in substitution of the CdS layer which is a toxic material generally used as buffer in CIS based solar cells.
InxSey, Ga$e, and ZnSe thin films deposited by different methods such as coevaporation, physical evaporation and close spaced sublimation methods, were characterized through X-Ray Diffraction (XRD), transmittance and Atomic Force Microscopy (AFM) measurements. These materials are an attractive alternative to the CdS buffer layer in the development of CIGS and CdTe based solar cells. This work has focused on studying the influence of the preparation method and film thickness on the optical gap, morphology and crystallographic phases of the above mentioned compounds. The studies revealed that the Indium selenide films grow mainly in the yIn2Se3 phase, the zinc selenide films grow in the ZnSe phase and the galium selenide grows in the phases 8-GaSe and P-Ga2 Se,.With the exception of the Zn Se films deposited by CSS method, in the rest of the studied films, it was observed a marked effect of the thickness on their optical gap, Eg. For samples of InSe, GaSe and ZnSe with a thickness of about 3.5 pn, Eg values were found of 1.9, 2.5 and 2.6 eV respectively
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.