Phase evolution of CIGS alloyed compound synthesis by direct melting method

Baek, Eung Ryul; Astini, Vita; Tirta, Andy; Kim, Bora

doi:10.1016/j.cap.2010.11.091

Cited by 19 publications

(5 citation statements)

References 16 publications

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“…Figure 2 shows XRD patterns of samples 1 and 2, prepared by selenizing metallic precursor films by pro cedure I. It follows from XRD data that samples 1 and 2 contain, in addition to CIS, an impurity phase, pre sumably CuSe, in agreement with what was reported by Baek et al [13]. It is worth pointing out that the intensity of the reflections from the impurity phase is essentially independent of the metal deposition sequence.…”

Section: Introductionsupporting

confidence: 82%

“…Note that the highest solar cell efficiency (19.9%) has been achieved under laboratory conditions using CIGS films grown by PVD [12]. This efficiency is, however, considerably lower than the maximum theoretical efficiency Ӎ33% [13], because a single phase, homogeneous material with tailored properties is difficult to prepare. Gajiev et al [14] pro duced CIGS films by selenizing metallic (Cu, In, and Ga) precursor films.…”

Section: Introductionmentioning

confidence: 99%

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Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

et al. 2014

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A technique has been developed for the preparation of CuIn x Ga 1 -x Se 2 layers through closed space selenization of precursor films containing intermetallic compounds. We also have produced CuIn x Ga 1 -x Se 2 films by selenizing metallic precursor films. Examination of the CuIn x Ga 1 -x Se 2 layers by X ray diffraction, atomic force microscopy, and scanning electron microscopy has shown that the use of inter metallic precursors offers a number of important advantages: phase purity and homogeneity of CuIn x Ga 1 -x Se 2 layers, in combination with good adhesion of the layers to substrates (glass or glass/molybdenum).

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Section: Introductionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

et al. 2014

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“…At a high heating rate, the reactants are quickly brought to a high temperature and directly converted into final (ternary or quaternary) products, thus simplifying the reaction path, avoiding the formation of intermediate binary compounds, and ensuring high purity of products. In contrast, by conventional melting with a lower heating rate, intermediate binary phases are often observed in a broad temperature range . If the binary phases are not fully consumed in the next step of reaction, they remain as impurities in final products.…”

Section: Resultsmentioning

confidence: 99%

“…In contrast, by conventional melting with a lower heating rate, intermediate binary phases are often observed in a broad temperature range. 35 If the binary phases are not fully consumed in the next step of reaction, they remain as impurities in final products.…”

mentioning

confidence: 99%

Fast preparation of Cu(In,Ga)Se₂ and CuIn(S,Se)₂ bulk materials by combustion synthesis

Liu

Chen

et al. 2018

J Am Ceram Soc

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CuIn1‐xGaxSe2 and CuIn(SySe1‐y)2 bulk materials with relative densities of 93.4%‐96.2% have been prepared by combustion synthesis, from elementary reactants and in a reaction time of a few seconds. The samples have a chalcopyrite lattice structure, and the lattice parameters decrease with increasing x and y. The substitution of In with Ga and Se with S in CuInSe2 causes an increase in the bandgap. In combustion synthesis, the high temperature accelerates the reaction and results in fast densification, the high heating rate simplifies the reaction path and avoids the formation of intermediate compounds, and the gas pressure depresses the evaporation of reactants. As a fast, furnace‐free, and scalable technique, combustion synthesis may offer a low‐cost way to produce CuInSe2‐based materials and bring new possibilities to their commercial applications.

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“…В последнее время пленки соединений этого типа хорошо зарекомендовали себя в тонкопленочных солнечных элементах (ТСЭ). Однако, хотя кпд солнечных элементов на основе таких слоев достиг 21.7% [3], он все же еще далек от теоретического предела ∼ 30% [4]. Причины такого отставания пока не выяснены, возможно, из-за недостатка необходимых параметров для расчетов и корректировки технологии.…”

Section: Introductionunclassified

Влияние Содержания Меди На Кинетику Микроволновой Фотопроводимости Твердых Растворов CIGS

Новиков¹,

Rabenok²,

Orishina³

et al. 2019

Физика И Техника Полупроводников

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The kinetics of the photoresponse of microwave photoconductivity (9 GHz, TE_101-type cavity) on excitation by laser light pulses with a wavelength of 337 nm and a duration of 8 ns in copper-deficient Cu_1 –_ x (In_0.7Ga_0.3)Se_2 (CIGS) (0 < x ≤ 0.4) solid solutions with the chalcopyrite structure is investigated in a wide light intensity range. With an increase in the laser radiation density to ~5 × 10^14 photon/cm^2 per pulse, the photoresponse acquires, along with the previously revealed skin effect, the effect of the filling of traps created by V _Cu vacancies and Cu^+2 · V _Cu defect associates, the concentration of which increases with a decrease in x in the CIGS formula.

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Phase evolution of CIGS alloyed compound synthesis by direct melting method

Cited by 19 publications

References 16 publications

Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

Fast preparation of Cu(In,Ga)Se₂ and CuIn(S,Se)₂ bulk materials by combustion synthesis

Влияние Содержания Меди На Кинетику Микроволновой Фотопроводимости Твердых Растворов CIGS

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Phase evolution of CIGS alloyed compound synthesis by direct melting method

Cited by 19 publications

References 16 publications

Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

Fast preparation of Cu(In,Ga)Se2 and CuIn(S,Se)2 bulk materials by combustion synthesis

Влияние Содержания Меди На Кинетику Микроволновой Фотопроводимости Твердых Растворов CIGS

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Fast preparation of Cu(In,Ga)Se₂ and CuIn(S,Se)₂ bulk materials by combustion synthesis