Effect of the composition and annealing conditions of precursor films on the structure of thin CuIn1 − x GaxSe2 (0 ≤ x ≤ 0.7) layers

Abstract

A technique has been developed for the preparation of CuIn x Ga 1 -x Se 2 layers through closed space selenization of precursor films containing intermetallic compounds. We also have produced CuIn x Ga 1 -x Se 2 films by selenizing metallic precursor films. Examination of the CuIn x Ga 1 -x Se 2 layers by X ray diffraction, atomic force microscopy, and scanning electron microscopy has shown that the use of inter metallic precursors offers a number of important advantages: phase purity and homogeneity of CuIn x Ga 1 -x Se 2 layers, in combination with good adhesion of the layers to substrates (glass or glass/molybdenum).

Halide Perovskite Crystallization Processes and Methods in Nanocrystals, Single Crystals, and Thin Films

“…For the HP crystal at a given temperature, its surface energy for per molecular unit can be considered to be definite. For the HP solution in a given solvent at a given temperature, its specific surface energy is smaller than that of its corresponding HP crystals and correlated with Growth temperature [°C] >1400 [35] >450 [36] >1100 [37] >500 [38] ≈100 [39] ≈150 [40] Bandgap [eV] 1.1-1.3 [41] 1.42 [42] 1.45 [43] 1.04-1.7 [44] 1.42-2.4 [39,[45][46][47] 1.2-3.0 [48] Absorption coefficient [cm −1 ] 10 3 to 10 4 [49][50][51] 10 4 to 10 5 [49][50][51] 10 4 to 10 5 [49][50][51] 10 4 to 10 5 [49][50][51] 10 4 to 10 5 [46] 10 4 to 10 5 [49][50][51] Electron/hole mobility [cm 2 V −1 s −1 ] 1500 [52] /500 [53] 8000/320 [54] 1090/110 [55] 100/25 [56] 10 −4 /10 −6 [47] 33/55 [57] Trap density [cm −3 ] 10 12 [58] 10 12 to 10 14 [59] 10 15 [60] 10 13 [38] 10 15 [45] 10 8 to 10 13 [17,…”