Third-generation Cu-In-Ga-(S, Se)-based solar inverters

Новиков, Г. Ф.; Гапанович, М. В.

doi:10.3367/ufne.2016.06.037827

Cited by 23 publications

(4 citation statements)

References 187 publications

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“…Regarding the impact of the Ga-profile on the charge carriers recombination mechanisms, only a few experimental studies are available, ,− and a deep understanding of this impact, is still lacking. As CIGS technology approaches the ideal Shockley-Queisser limit, further improvements will strongly depend on the understanding of fundamental physical properties, such as CIGS complex electronic energy levels structure and the recombination mechanisms of carriers.…”

Section: Introductionmentioning

confidence: 99%

Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

et al. 2020

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Depth bandgap profiles via a [Ga]/([Ga]+[In]) variation in the Cu(In,Ga)Se2 (CIGS) absorber layer have been implemented as a strategy to enhance the performance of CIGS solar cells. Since the [Ga]/([Ga]+[In]) determines to a large extent the position of the conduction band minimum, different Ga-profiles lead to different electronic energy levels structures throughout the CIGS layer. In this paper, from the investigation of the dependence of the photoluminescence (PL) on excitation power and temperature, we critically analyze the impact of a notch or a linear Ga-profile on the CIGS electronic energy levels structure and subsequent dominant recombination channels. Notwithstanding, two radiative transitions involving fluctuating potentials were observed for each sample, and significant differences in the luminescence resulting from the two Ga-profiles were identified. For the CIGS absorber with a notch Ga-profile, two tail-impurity radiative transitions involving equivalent donor clusters and the same deep acceptor level were ascribed to the CIGS/CdS interface region and to the notch region. The probability of radiative recombination in these two regions is discussed. For the CIGS absorber with a linear Ga-profile, two band-impurity radiative transitions involving an acceptor, with an ionization energy compatible with the V Cu defect were ascribed to the CIGS/CdS interface region. Our results show that the dominant acceptor defects are dependent on the Ga-profile, and they also highlight the complexity of the radiative and nonradiative recombination channels revealed by the tight control of the parameters in the experiment.

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Section: Introductionmentioning

confidence: 99%

Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

et al. 2020

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“…In addition, the band gap of CdS is 2.4 eV, which is low and ineffective for the buffer layer. A good alternative for the CdS buffer layer is non-toxic ZnS films, which, due to their large band gap, transmit light in the near ultraviolet region [14].…”

Section: Introductionmentioning

confidence: 99%

Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

Sergeyev

Shunkeyev

Kuatov

et al. 2021

Eurasian J. Phys. Funct. Mater.

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In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.

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“…Currently, work is underway to study thin-film solar cells based on Cu (In, Ga) (S, Se)2 (CIGS) [21]- [23]. This is due to the fact that they have high absorption coefficients and are relatively cheap [24]. However, despite the above advantages, thin-film solar cells based on CIGS are inferior to their counterparts in terms of efficiency and radiation resistance, and the elements In and Ga included in CIGS are highly toxic substances.…”

Section: Introductionmentioning

confidence: 99%

Influence of “Productive” Impurities (Cd, Na, O) on the Properties of the Cu₂ZnSnS₄ Absorber of Model Solar Cells

Sergeyev

Zhanturina

Aizharikov

et al. 2021

Latvian Journal of Physics and Technical Sciences

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The study focuses on the optical properties of the CZTS multicomponent semiconductor absorber with 3 % “production” impurities of Cd, Na, O within the framework of the density functional theory using the generalized gradient approximation and the SCAPS program, as well as investigates their influence on the performance and efficiency of CZTS-solar cells. The results showed that the introduction of Cd, Na, O impurities would lead to a decrease in the intensity of the absorption bands at 2.06 eV and 2.55 eV. The density of states CZTS: (Cd, Na, O) was determined from first principles, and it was revealed that impurities of Cd and O atoms would lead to a decrease in the band gap (to 0.9 eV and 0.79 eV), and an increase in Na impurity absorption (1.2 eV). It was also found that a decrease in the band gap led to a decrease in the open circuit voltage, and it was also shown that “industrial” impurities led to a decrease in the efficiency of energy conversion of solar cells to 2.34 %.

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Third-generation Cu-In-Ga-(S, Se)-based solar inverters

Cited by 23 publications

References 187 publications

Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

Influence of “Productive” Impurities (Cd, Na, O) on the Properties of the Cu₂ZnSnS₄ Absorber of Model Solar Cells

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Third-generation Cu-In-Ga-(S, Se)-based solar inverters

Cited by 23 publications

References 187 publications

Recombination Channels in Cu(In,Ga)Se2 Thin Films: Impact of the Ga-Profile

Recombination Channels in Cu(In,Ga)Se2 Thin Films: Impact of the Ga-Profile

Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

Influence of “Productive” Impurities (Cd, Na, O) on the Properties of the Cu2ZnSnS4 Absorber of Model Solar Cells

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Product

Resources

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Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

Recombination Channels in Cu(In,Ga)Se₂ Thin Films: Impact of the Ga-Profile

Influence of “Productive” Impurities (Cd, Na, O) on the Properties of the Cu₂ZnSnS₄ Absorber of Model Solar Cells