Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Abstract

a b s t r a c tHigh fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

Pnictogen (As, Sb, Bi) Nanosheets for Electrochemical Applications Are Produced by Shear Exfoliation Using Kitchen Blenders

“…Images were taken of the acquired spectra area, where the decrease in flake size for Pnictogen SE is also observed (Supporting Information, Figure S4). TheR aman peaks of Pnictogen bulk match well with previously reported spectra, [12,19,28,29] having in common the E g peaks corresponding to an in-plane vibrational mode at lower wavenumbers (ñ ), and A 1 g peaks corresponding an out-of-plane vibrational mode at higher ñ values.P eak positions and E g /A 1 g are summarized in Table S1, which becomes closer to 1f or Pnictogen SE .T he Raman spectra of Pnictogen SE have lower intensities and the signal shifts to higher ñ values.T his dependence of the Raman intensities has been previously reported to be related with flake thickness for exfoliated flakes of Sb. [14,18] Thesame reasoning can be applied here for As SE and Bi SE .…”

Pnictogen (As, Sb, Bi) Nanosheets for Electrochemical Applications Are Produced by Shear Exfoliation Using Kitchen Blenders

“…Images were taken of the acquired spectra area, where the decrease in flake size for Pnictogen SE is also observed (Supporting Information, Figure S4). The Raman peaks of Pnictogen bulk match well with previously reported spectra, having in common the E g peaks corresponding to an in‐plane vibrational mode at lower wavenumbers ( ), and A 1 g peaks corresponding an out‐of‐plane vibrational mode at higher values. Peak positions and E g /A 1 g are summarized in Table S1, which becomes closer to 1 for Pnictogen SE .…”

Unraveling structural and compositional information in 3D FinFET electronic devices

“…Different from the top, which had only the native oxide, the bottom part of the FinFET had a much thicker SiO 2 layer due to the SOI structure used to create the fins by chemical etching. Investigations in planar systems 20,21 show that the As implanted in Si through a narrow native oxide, can interact with the oxygen from the atmosphere resulting in a SiO 2 layer of approximately 10 nm in which the As is distributed almost homogeneously. Therefore, the As profile at top should be more uniform than at bottom where the As was implanted only in the SiO 2 layer.…”