The monazite-type solid solution La 1−x Pr x PO 4 was synthesized by solid-state reaction and extensively investigated using electron microprobe and thermogravimetric analyses, differential scanning and high-temperature oxide melt solution calorimetry, powder X-ray diffraction, infrared and Raman spectroscopy. Lattice parameters and Ln-O bond lengths show a decrease with increasing Pr content. A small excess volume is observed for the solid solution. IR 1

The external detector method (EDM) is a widely used technique in fission track thermochronology (FTT) in which two different minerals are concomitantly employed: spontaneous tracks are observed in apatite and induced ones in the muscovite external detector. They show intrinsic differences in detection and etching properties that should be taken into account. In this work, new geometry factor values, g, in apatite, were obtained by directly measuring the r ed /r is ratios and independently determined [GQR] ed/is values through the measurement of projected lengths. Five mounts, two of which were large area prismatic sections and three samples composed of random-orientation pieces have been used to determine the g-values. A side effect of applying EDM is that the value of the initial confined induced fission track, L 0 , is not measured in routine analyses. The L 0 -value is an important parameter to quantify with good confidence the degree of annealing of the spontaneous fission tracks in unknown-age samples, and is essential for accurate thermal history modeling. The impact of using arbitrary L 0 -values on the inference of sample thermal history is investigated and discussed. The measurement of the L 0 -value for each sample to be dated using an extra irradiated apatite mount is proposed. This extra mount can be also used for determining the g value as an extension of the r ed / r is ratio method. Eight apatite samples from crystalline basement, with grains at random orientation, were used to determine the g-values. The results found are statistically in agreement with the values found for apatite samples (from Durango, Mexico) measured in prismatic section and also measured at random orientation. There was no observable variation in efficiency regarding crystal orientation, showing that it is relatively safe using non-prismatic grains, especially in samples with paucity of grains, as it is the case of most basin samples. Implications for the z-calibration and for the calibration of the direct (spectrometer-based) fission-track dating are also discussed.

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The formation conditions and dynamics of Ca colloids and point defects that appear in irradiated single crystals of CaF2 were investigated by Raman spectroscopy. The intensity changes in the Raman spectra because of the presence of different concentrations of point defects and Ca colloids that emerged in CaF2 after irradiation with 2.2 GeV Au ions were used to study their distribution and stability under illumination with three laser wavelengths (473, 532 and 633 nm) at different output powers (2 to 200 mW). A damage saturation at a fluence of 6 × 1011 ion cm−2 was observed. The dependence of the spectral changes on the ion fluence can be described by a core/halo damage cross‐section model. A radius of 13–18 nm was obtained for the outer (halo) cylinder, in agreement with previous swelling studies. Illuminations of irradiated samples with blue (473 nm) and green (532 nm) lasers were found to be extremely efficient in bleaching the samples, while illumination with a red (633 nm) laser did not lead to a sample recovery. This indicates that the bleaching process is governed by recombination of point defects that have to overcome an energy barrier. Typical time constants for the processes involved are presented. Copyright © 2016 John Wiley & Sons, Ltd.

Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology.