Evidence of a high density of fixed negative charges in an insulation layer compound on silicon

König, Dirk; Rennau, M.; Henker, M.; Ebest, G.

doi:10.1016/s0040-6090(00)01926-x

Cited by 16 publications

(9 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this paper, we show the best experimental results of aluminium oxynitride (AlON) films than our previous oxidized AlN films [14] and other group results such as AlF films [10] of an MIS structure with a high density of fixed negative interface charges.…”

Section: Introductionmentioning

confidence: 49%

“…There is a current trend of using metal-insulator (IS) and metalinsulator-semiconductor (MIS) structures in electronic devices [8][9][10]. On the other hand, until now only a few works have reported negatively charged MIS structure [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, until now only a few works have reported negatively charged MIS structure [10][11][12][13]. Employing a negatively charged insulator-semiconductor structure to the back surface of ptype silicon solar cell could replace the conventional back surface of passivating dielectric layers like silicon nitride (Si 3 N 4 ) and silicon dioxide (SiO 2 ).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical and electrical properties of negatively charged aluminium oxynitride films

et al. 2008

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical and electrical properties of negatively charged aluminium oxynitride films

et al. 2008

View full text Add to dashboard Cite

“…The I − S structure [3] can be used for I. passivating solar cell surfaces where electron injecting electrodes contact a p-type conduction layer (field induced by I − S structure or by doping) [4].…”

Section: Applicationsmentioning

confidence: 99%

“…The negatively charged IS structure (I − S structure) already described in [2,4] As the most recent results are subject to this publication we refer to [2,4,6] for further information.…”

Section: Introductionmentioning

confidence: 99%

Novel external field source by localization of electrons for improvement of solar cells

König

Ebest

2003

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

For drift field generation IS structures with a fixed positive charge were developed in the 80's and employed on solar cells. While many papers were published about the positively charged IS structure there has been little interest in a negatively charged IS structure (I − S structure) [1]. In comparison to solar cells with back surface field (BSF) such structures could improve conversion efficiency more significantly. They also open the way to novel field effect supported solar cells on n-type silicon.The paper represents results of the preparation and characterization of the I − S structure on Silicon (Si) consisting of a layer compound AlF 3 ||SiO 2 on Si, a discussion of the phenomena encountered and respective conclusions.

show abstract

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

214

161

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

show abstract

Evidence of a high density of fixed negative charges in an insulation layer compound on silicon

Cited by 16 publications

References 20 publications

Optical and electrical properties of negatively charged aluminium oxynitride films

Optical and electrical properties of negatively charged aluminium oxynitride films

Novel external field source by localization of electrons for improvement of solar cells

Dielectric surface passivation for silicon solar cells: A review

Contact Info

Product

Resources

About