Novel external field source by localization of electrons for improvement of solar cells

Abstract

For drift field generation IS structures with a fixed positive charge were developed in the 80's and employed on solar cells. While many papers were published about the positively charged IS structure there has been little interest in a negatively charged IS structure (I − S structure) [1]. In comparison to solar cells with back surface field (BSF) such structures could improve conversion efficiency more significantly. They also open the way to novel field effect supported solar cells on n-type silicon.The paper represents results of the preparation and characterization of the I − S structure on Silicon (Si) consisting of a layer compound AlF 3 ||SiO 2 on Si, a discussion of the phenomena encountered and respective conclusions.