Field effect of fixed negative charges on oxidized silicon induced by AlF3 layers with fluorine deficiency

Direct tunneling effective mass of electrons determined by intrinsic charge-up process

“…The average effective fixed charge density Q eff ðtÞ ¼ Q SiO 2 þ Q AlF 3 ðtÞ was measured by 49-point Hg-CV wafer maps as a function of time at initially weekly intervals, being extended later on to a month [3,4]. Steady Hg-CV characterization would violate the assumption that tunneling occurs under zero bias field.…”

“…The wafers were cleaned by the RCA process prior to a standard furnace oxidation (HCl/O 2 = 3/97, T = 1000°C, t = 160 s). The deposition of the AlF 3 layer was done by PVD, for further details see [3,4].…”

“…The material system AlF 3 /SiO 2 /Si contains fluorine (F) vacancies at the interface AlF 3 /SiO 2 . Its preparational, experimental and theoretical details have been described elsewhere [3,4]. Fig.…”

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

“…23 A similar beneficial effect from charge injection was also reported for AlF 3 films. 24 Furthermore, the reported UV stability of the interface defect density 22 From mass spectrometry cracking patterns, the most likely parent molecules contributing to the signals at the selected mass-to-charge ratios have been determined. The transients are offset for clarity.…”

Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure

“…Many groups have studied different methods for forming field-effect passivation. Field-effect passivity construction can be obtained by embedding charge in double dielectric layers，by using intrinsic fixed charge of dielectric material, by introducing external electric field through metal-insulator-semiconductor (MIS) structure, etc [7][8][9][10][11][12][13][14]. However, the interference factor on contact surfaces of dielectric material should be avoided, such as interfacial stress, surface defects and inter diffusion.…”