Direct tunneling effective mass of electrons determined by intrinsic charge-up process

König, Dirk; Rennau, M.; Henker, M.

doi:10.1016/j.sse.2007.03.009

Cited by 29 publications

(16 citation statements)

References 17 publications

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“…The I-V curves are well described by the Fowler-Nordheim field-enhanced tunneling law 17 with effective energy barrier heights of 1.4 and 1.9 eV for Si-NC and Si-NC:Er LED, respectively (assuming an effective electron mass of 0.3 m 0 ). 20 The Er-doped device is less conductive than the undoped device, which we ascribe to charge trapping at deep energy levels due to Er ion implantation. 21 This is also supported by the C-V measurements (Fig.…”

Section: A Direct Current Excitationmentioning

confidence: 87%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. V C 2012 American Institute of Physics. [http://dx

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Section: A Direct Current Excitationmentioning

confidence: 87%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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“…Light soaking increases the average value of this negative Q fix to −4.85 × 10 12 cm −2 43. DFT calculations show that F vacancies are acceptor type defects which can localize electrons originating from Si and tunnelling though SiO 2 42434445, yielding a negative Q fix . We note here that O was not present in AlF x nor did the ultrathin SiO 2 layer on the Si wafer contain excess O43.…”

Section: Discussionmentioning

confidence: 99%

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

König

Hiller

Gutsch

et al. 2017

Sci Rep

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All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

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“…Furthermore, Watanabe et al pointed out that besides the used method the treatment of the Si/SiO 2 transition, whether it is assumed as an abrupt transition or with an interfacial transition layer, significantly influences the resulting tunneling mass [31]. In more recent works, values of 0.3 [32] to 0.58 m 0 [33] were presented.…”

Section: Tunneling and Tunneling Massmentioning

confidence: 99%

Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides

Steinkemper

Feldmann

Bivour

et al. 2015

IEEE J. Photovoltaics

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Recently, n-type Si solar cells featuring tunnel-oxidepassivated contacts have achieved remarkable conversion efficiencies of up to 24.9%. Different approaches concerning the doped Si layer, which can be amorphous, polycrystalline, or partially crystalline, have been presented over the past few years. In this paper, carrier-selective electron contacts featuring tunnel oxides are investigated by means of numerical device simulation. The influence of 1) the Si layer material, 2) the Si layer doping, 3) an additional in-diffusion in the absorber, 4) the surface recombination velocity at the oxide interface, and 5) the oxide thickness and the tunneling mass are investigated by means of an open-circuit voltage analysis, as well as a fill factor (FF) analysis. With the fundamental understanding generated in this paper, we are able to explain the excellent device performance of solar cells with carrier-selective contacts featuring tunnel oxides.

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Direct tunneling effective mass of electrons determined by intrinsic charge-up process

Cited by 29 publications

References 17 publications

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides

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