Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides

Lee

Progress in Photovoltaics

et al. 2019

This study proposes a hybrid solar cell structure for a highly efficient silicon solar cell obtained by combining two passivating contact structures, namely, a heterojunction and polysilicon passivating contact. Given that the major cause of the loss in efficiency of crystalline silicon solar cells is carrier recombination at the metal‐semiconductor junction, a passivating contact having high‐quality passivation and a low contact resistance was introduced. In this study, two major passivating contact solar cells were combined. By applying an intrinsic thin amorphous silicon layer at the front and a tunneling oxide at the rear, a hybrid silicon solar cell with an efficiency of 21.8% was fabricated. Moreover, to evaluate the potential efficiency limit and to suggest methods for improving the cell performance of the proposed amorphous silicon emitter tunnel oxide back contact structure, the cell efficiency was simulated, and the result indicated that an efficiency of 26% could be achieved by controlling the thickness and resistivity of the wafer.

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Tunnel oxide passivating electron contacts for high‐efficiency n‐type silicon solar cells with amorphous silicon passivating hole contacts

Lee

Progress in Photovoltaics

et al. 2019

“…With the presence of silicon oxide between SnO 2 and Si, the tunnelling mechanism is enabled with the same approach delineated in ref. 41.…”

Section: Electrical Simulationsmentioning

confidence: 99%

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Zheng

Lau

Mehrvarz

et al. 2018

Energy Environ. Sci.

195

186

aMonolithic perovskite/silicon tandem solar cells show great promise for further efficiency enhancement for current silicon photovoltaic technology. In general, an interface (tunnelling or recombination) layer is usually required for electrical contact between the top and the bottom cells, which incurs higher fabrication costs and parasitic absorption. Most of the monolithic perovskite/Si tandem cells demonstrated use a hetero-junction silicon (Si) solar cell as the bottom cell, on small areas only. This work is the first to successfully integrate a low temperature processed (r150 1C) planar CH 3 NH 3 PbI 3 perovskite solar cell on a homo-junction silicon solar cell to achieve a monolithic tandem without the use of an additional interface layer on large areas (4 and 16 cm 2 ).Solution processed SnO 2 has been effective in providing dual functions in the monolithic tandem, serving as an ETL for the perovskite cell and as a recombination contact with the n-type silicon homo-junction solar cell that has a boron doped p-type (p++) front emitter. The SnO 2 /p++ Si interface is characterised in this work and the dominant transport mechanism is simulated using Sentaurus technology computer-aided design (TCAD) modelling. The champion device on 4 cm 2 achieves a power conversion efficiency (PCE) of 21.0% under reverse-scanning with a V OC of 1.68 V, a J SC of 16.1 mA cm À2 and a high FF of 78% yielding a steady-state efficiency of 20.5%. As our monolithic tandem device does not rely on the SnO 2 for lateral conduction, which is managed by the p++ emitter, up scaling to large areas becomes relatively straightforward. On a large area of 16 cm 2 , a reverse scan PCE of 17.6% and a steady-state PCE of 17.1% are achieved. To our knowledge, these are the most efficient perovskite/homo-junction-silicon tandem solar cells that are larger than 1 cm 2 . Most importantly, our results demonstrate for the first time that monolithic perovskite/silicon tandem solar cells can be achieved with excellent performance without the need for an additional interface layer. This work is relevant to the commercialisation of efficient large-area perovskite/homo-junction silicon tandem solar cells. Broader contextA simple approach for integrating a perovskite solar cell monolithically onto a Si solar cell is reported here. The first advantage of this approach is that it does not require additional fabrication of an additional interface layer between the perovskite and Si cell. The second advantage of this approach is that it is compatible with a homo-junction p-n Si solar cell, which is a common Si solar cell structure for commercial cells. The third advantage is that the entire sequence for the planar perovskite cell fabrication is done at low temperatures, minimising damage to the bottom Si solar cell. The fourth advantage is that the SnO 2 electron transport layer of the perovskite top cell also serves as a recombination contact with the silicon bottom cell. Finally, this monolithic tandem approach does not rely on the SnO 2 for lateral conducti...

“…Some other applications of MIS devices have been mentioned in the introduction of author"s earlier article [3]. More recently, numerical simulation of a passivated emitter solar cell is performed [4] and an MIS photoanode finds use in artificial photosynthesis experiment of water-splitting where the thin tunnel oxide protects the Si from corrosion due to evolving O 2 at the anode [5]. MIS devices are also used in internal photoemission experiments to determine band offsets of MIS interfaces [6] in which the applied field across the insulator can be corrected by the flatband voltage [7].…”

Section: Introductionmentioning

confidence: 99%

Accurate Dielectric Capacitance Determination from MetalInsulator-Semiconductor Devices Having Bias and Frequency Dependent Conductance Due To Leakage Current

Chanana¹

2017

IOSR