Optical and electrical properties of negatively charged aluminium oxynitride films

Jang, Kyungsoo; Jung, Sungwook; Lee, Jeoungin; Lee, Kwangsoo; Kim, Jae Hong; Son, Hyukjoo; Yi, Junsin

doi:10.1016/j.tsf.2008.08.138

Cited by 6 publications

(6 citation statements)

References 16 publications

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“…Thus the negative charge is lower with lower oxygen content as the film resembles more like AlN rather than Al 2 O 3 . This is similar to observations of K Jang et al [80]. There is minimal contribution of negative charge from the Al-based dielectric bulk since our separate experiments with different ATTENTION: The Singapore Copyright Act applies to the use of this document.…”

Section: Process Detailssupporting

confidence: 90%

“…The ideal flat-band voltage (V FB ) was deduced from an ideal CV curve obtained using Medici TM device simulation with an Al gate (work function= 4.1 eV). Presence of negative fixed charge is typical of Al incorporated high-k dielectrics even when deposited on Si[77][78][79][80]. In particular a very high density of fixed negative charge (Q F = -3 to -8×10 12 /cm 2 ) has been reported in Aluminum oxide Al 2 O 3…”

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confidence: 99%

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Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

Sudhakar¹

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In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (E g ~3.26 eV), high breakdown electric field (E c ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×10 7 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO 2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300 o C operation). Edge termination and passivation is a critical technology for power devices to fully realize their voltage blocking potential. The objective of this research was to develop the process technology for fabrication of high voltage 4H-SiC SBDs. We decided to use a simple edge termination technique based on Field-Plate (FP) termination. The simplicity of FP termination lies in the fact that unlike other termination techniques such as guard rings, mesa and Junction Termination Extensions (JTE), it does not need high temperature ionimplantations. Such high temperature implantation requires the substrate to be maintained at 700-1000 o C during implantation. It also needs subsequent extreme high temperature anneals in excess of 1500 o C to reduce implantation damage. There are also design issues such as the need to optimize ring spacing. FP termination technique has long been a power horse of Si power device technology using thick SiO 2 field oxide and poly silicon as electrode overlapping the oxide. For past decade or so since its first application to SiC power device ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library XI 6.5.3 Electric Field profile of FP terminated 4H-SiC SBDs along the schottky edge with 2-step Breakdown………………………………. 6.6 Conclusions………………………………………………………………. 7. Conclusions and Recommendations for Future Work………………………… 7.1 Conclusions………………………………………………………………. 7.2 Recommendations for Future Work…………………………………….

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Section: Process Detailssupporting

confidence: 90%

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confidence: 99%

Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

Sudhakar¹

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“…The addition of oxygen into a growing AlN thin film induces the production of ionic metal-oxygen bonds inside a matrix of covalent metal-nitrogen bond. Placing oxygen atoms inside the würzite structure of AlN can produce important modifications in their electrical and optical properties of the films, and thereby changes in their thermal conductivity and piezoelectricity features are produced too (Brien & Pigeat, 2008;Jang et al, 2008). Thus, the addition of oxygen would allow to tailor the properties of the AlN x O y films between those of pure aluminium oxide (Al 2 O 3 ) and nitride (AlN), where the concentration of Al, N and O can be varied depending on the specific application being pursued (Borges et al, 2010;Brien & Pigeat, 2008;Ianno et al, 2002;Jang et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

“…Placing oxygen atoms inside the würzite structure of AlN can produce important modifications in their electrical and optical properties of the films, and thereby changes in their thermal conductivity and piezoelectricity features are produced too (Brien & Pigeat, 2008;Jang et al, 2008). Thus, the addition of oxygen would allow to tailor the properties of the AlN x O y films between those of pure aluminium oxide (Al 2 O 3 ) and nitride (AlN), where the concentration of Al, N and O can be varied depending on the specific application being pursued (Borges et al, 2010;Brien & Pigeat, 2008;Ianno et al, 2002;Jang et al, 2008). Combining some of their advantages by varying the concentration of Al, N and O, aluminium oxynitride films (AlNO) can produce applications in corrosion protective coatings, optical coatings, microelectronics and other technological fields (Borges et al, 2010;Erlat et al, 2001;Xiao & Jiang, 2004).…”

Section: Introductionmentioning

confidence: 99%

Controlled Growth of C-Oriented AlN Thin Films: Experimental Deposition and Characterization

García-Méndez¹

2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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“…[1][2] And the AlON film has the good properties of Al2O3 and AlN as a material of microelectronics technological advantage due to its wide bandgap, high optical transmission, and high thermal conductivity, It is well known that nitrogen incorporated into the oxide films can give a rise to the particular characteristics of N incorporation and its stability. [3][4][5] Especially, in N-incorporated Al2O3 structure(AlON) it has been reported that AlON has a high density of fixed negative charges, which can be used for field-induced passivation for some electronic devices including solar cells on p-type substrate.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen effect on negative fixed charges of Al<inf>2</inf>O<inf>3</inf> passivation film in crystalline Si solar cells

Shin

Kwak

Kim

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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We demonstrated the electrical evolution of the AlO, AlN, and AlON and the nitrogen (N) effect on negative fixed charges, which is responsible for the reduced positive charge traps of Al2O3 passivation films in crystalline Si solar cells. The AlO and AlN deposited by RF sputtering system were served as reference samples, and the AlON prepared by a nitrogen plasma exposure was served as controlled sample. The electrical properties of these samples were demonstrated through high-low (HL) capacitance-voltage (C-V) of metal-insulatorsemiconductor (MIS) and photo-induced current transient spectroscopy (PICTS) to investigate interface and bulk defect states in the insulating films. 1MHz C-V curves of AlO, AlN, and AlON films, in which flatband voltage shifts (VFB) are around -0.55, -2.8 and 3.6 V, respectively. It reveals that the positive shift takes place as compared to the others and negative fixed charges are dominant in the AlON film. It was observed that defect states were decreased in the AlON film, and especially the defect state of 0.42 eV approximately disappeared. From the HL

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Optical and electrical properties of negatively charged aluminium oxynitride films

Cited by 6 publications

References 16 publications

Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

Controlled Growth of C-Oriented AlN Thin Films: Experimental Deposition and Characterization

Nitrogen effect on negative fixed charges of Al<inf>2</inf>O<inf>3</inf> passivation film in crystalline Si solar cells

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