Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Parrish, Kristen N.; Akinwande, Deji

doi:10.1063/1.3664112

Cited by 18 publications

(9 citation statements)

References 17 publications

(22 reference statements)

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“…Aggressive gate oxide scaling is required to enhance the conversion efficiency, together with the suppression of non-ideal factors, such as high contact resistance and impurity concentration. 23 The high conversion gain in this work supports that the proposed inverted integration process is suitable for GFETs fabrication. Fig.…”

Section: Graphene Frequency Multipliersupporting

confidence: 72%

Inverted process for graphene integrated circuits fabrication

Liu

et al. 2014

Nanoscale

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CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in the first metal layer and GFETs are formed with buried gate/source/drain in the second metal layer. Gate dielectric of 3.1 nm in equivalent oxide thickness (EOT) is employed. 500 nm-gate-length GFETs feature a yield of 80% and fT/fmax = 17 GHz/15.2 GHz RF performance. A high-performance monolithic graphene frequency multiplier is demonstrated using the proposed process. Functionality was demonstrated up to 8 GHz input and 16 GHz output. The frequency multiplier features a 3 dB bandwidth of 4 GHz and conversion gain of -26 dB.

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Section: Graphene Frequency Multipliersupporting

confidence: 72%

Inverted process for graphene integrated circuits fabrication

Liu

et al. 2014

Nanoscale

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“…Moreover, the previously reported works have shown that the microscopic mechanisms that cause such effects in graphene are very different and strongly enhanced when compared with those observed in conventional semiconductors [2,14]. High-efficiency second-and third-harmonic generation effects have been achieved in monolayer graphene-based transistors, from relatively low frequencies up to the millimeter-wave frequency band [15][16][17], and they have also been experimentally observed in few-layer graphene sheets [6,8,11,13].…”

Section: Introductionmentioning

confidence: 97%

Experimental analysis of the high-order harmonic components generation in few-layer graphene

Hadarig¹,

Vázquez²,

Fernández³

et al. 2014

Appl. Phys. A

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In this work, the nonlinear electromagnetic response of a few-layer graphene sheet is experimentally analyzed. The few-layer graphene sheet is obtained through mechanical exfoliation from highly ordered pyrolytic graphite and embedded in a rectangular waveguide structure which is used to guide the exciting and the output signals. The nonlinear electromagnetic response of the graphene sheet is exploited to implement a frequency multiplier in which the output signal, in the 330-500 GHz frequency band, will be obtained as a high-order harmonic component of the input signal, in the 26-40 GHz frequency band. Due to the particular selection of the input and output frequency ranges, the behavior of several harmonic components, from order 9 to 17, can be characterized. The analysis will be focused on the frequency response of the graphene sheet, the influence of the input power on the output signal and the differences between the even-and odd-order harmonic components. Finally, it will be shown that the developed assembly can be used as THz signal source based on high-order frequency multiplication.

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“…This capability was experimentally demonstrated through a wide variety of experiments covering from the low microwave region to the optical domain, describing the generation of second- [19]- [22] and third-order [23]- [25] harmonic components, and performing frequency mixing [26]- [28]. Furthermore, several graphene-based transistors [29]- [32] have also been reported.…”

Section: Introductionmentioning

confidence: 94%

On the Development of a Simulation Strategy to Model the Behavior of Graphene-Based Devices in Electromagnetic Simulators

et al. 2019

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This paper presents a new simulation strategy to be implemented in electromagnetic simulators in order to calculate the level of the induced high-order harmonic components in mono-and bi-layer graphene flakes when they are driven by an input electromagnetic field and to evaluate the frequency response of structures, including graphene. The technique is applied to the design and analysis of a single-stage highorder frequency multiplier capable of generating an output signal in the 220-330-GHz range from an input signal in the 26-40-GHz bands, whose topology is based on a structured graphene sheet enclosed in a waveguide resonant cavity that maximizes the incident electromagnetic field. A prototype was implemented to validate the method, obtaining a good agreement with the simulation results. Furthermore, the prototype was also used to experimentally characterize the performance of the multi-layer graphene sheets. In this case, the developed model is used to calculate the frequency response of the structure, but it is not able to predict the output power since the mathematical model describing the frequency conversion phenomena cannot be extrapolated to the multi-layer graphene. Several configurations were tested in order to determine the influence of the graphene sheet's thickness and shape on the output power. Finally, a −33-dBm level output signal at 280 GHz was generated as the seventh-harmonic component of an input signal with a frequency of 40 GHz, showing that the presented prototype can be used as a signal generator in practical submillimeterwave applications.

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Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Cited by 18 publications

References 17 publications

Inverted process for graphene integrated circuits fabrication

Inverted process for graphene integrated circuits fabrication

Experimental analysis of the high-order harmonic components generation in few-layer graphene

On the Development of a Simulation Strategy to Model the Behavior of Graphene-Based Devices in Electromagnetic Simulators

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