Evaluation technique of gate oxide damage

Uraoka, Yukiharu; Eriguchi, Koji; Tamaki, Toru; Tsuji, Kazuhiko

doi:10.1109/icmts.1993.292878

Cited by 6 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Defect-related breakdown has been well studied. The breakdown is dominated by the defects in the underlying substrate [66][67][68][69][70], by additional impurities in the oxide [71][72][73][74][75][76][77][78][79][80][81], by the surface roughness [82][83][84][85][86][87][88], etc. The requirements for the continuous scaling of the gate oxide have pushed the industry to concentrate on the defect-related breakdown.…”

Section: Sio 2 Reliabilitymentioning

confidence: 99%

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Lu¹

View full text Add to dashboard Cite

Firstly, if I honestly reflect on who I am, how I got here, what I think I might do well, and so forth, I feel deeply indebted to my supervisor, Prof. Zhu Weiguang, for his constant supervision, encouragements, invaluable suggestion, timely assistance and guidance toward the completion of this work. His depth and breadth of knowledge in research inspired me to explore the world. His patience and calm guidance in the hard parts of my research work made me thankful to him. I would like to express my gratitude to Prof. Lu Huibin for his invaluable guidance in the installation and operation of Laser-MBE system, Dr. R. Gopalkrishnan for his systematic training on AES system and provident guidance on this research work, Dr. Chen Xiaofeng for his continuous and precious guidance at each stage of this work, Prof. Chen Yanfeng for his help in TEM observation, and Mr. Chua Tong Sun for his persistent and timely support in the maintenance of Laser-MBE system.

show abstract

Section: Sio 2 Reliabilitymentioning

confidence: 99%

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Lu¹

View full text Add to dashboard Cite

show abstract

Identification of MOS oxide defect location with a spatial resolution less than 0.1 μm using photoemission microscope

Ohzone

Yuzaki

Matsuda

et al.

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

View full text Add to dashboard Cite

The maximum photoemission position corresponding to the oxide defect was determined in a spatial resolution less than 0.1 p by a combination of an improved photoemission microscope with a magnification of 500x and a test structure of MOS capacitors which had a periodic X-Y matrix pattern to define the precise oxidedefect location. The field-oxide islands, which had photoemission spots from the oxide defects, distributed at random. The LOCOS edge corresponding to the intensity dent of the reflected light image was tocated at about +0.3 pm from the gate-oxide edge. The oxide-defects were located in +0.4 --0.1 pm from the LOCOS edge.

show abstract

Failure Analysis of damaged dielectric on resistor and capacitor with EMMI and IR-OBIRCH

Liu¹,

Wu²,

Fan³

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

View full text Add to dashboard Cite

Evaluation technique of gate oxide damage

Cited by 6 publications

References 7 publications

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Identification of MOS oxide defect location with a spatial resolution less than 0.1 μm using photoemission microscope

Failure Analysis of damaged dielectric on resistor and capacitor with EMMI and IR-OBIRCH

Contact Info

Product

Resources

About