High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Abstract

Firstly, if I honestly reflect on who I am, how I got here, what I think I might do well, and so forth, I feel deeply indebted to my supervisor, Prof. Zhu Weiguang, for his constant supervision, encouragements, invaluable suggestion, timely assistance and guidance toward the completion of this work. His depth and breadth of knowledge in research inspired me to explore the world. His patience and calm guidance in the hard parts of my research work made me thankful to him. I would like to express my gratitude to Prof. Lu Huibin for his invaluable guidance in the installation and operation of Laser-MBE system, Dr. R. Gopalkrishnan for his systematic training on AES system and provident guidance on this research work, Dr. Chen Xiaofeng for his continuous and precious guidance at each stage of this work, Prof. Chen Yanfeng for his help in TEM observation, and Mr. Chua Tong Sun for his persistent and timely support in the maintenance of Laser-MBE system.